All-Russian Electrotechnical Institute named after V.I.Lenin View Homepage


Ontology type: grid:Education  | foaf:Organization     


Organization Info

NAME

All-Russian Electrotechnical Institute named after V.I.Lenin

HOMEPAGE

http://vei.ru/index.php?lang=ru

ADDRESS

http://www.grid.ac/institutes/grid.469895.f/address-0

Publications in SciGraph latest 20 shown

  • 2018-11 Electron-Optical Systems with a Shielded Cathode and an Elliptical Ribbon Beam in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-08 Formation and Transport of a Dense Electron Beam with Near-Rectangular Cross Section in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-06 On the Theory of Compensated Bipolar Beams in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-06 On the Theory of Bipolar Beams of Charged Particles in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-05 A Relativistic Electron Beam with an Elliptical Cross Section in the Plane Magnetic Field in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-03 Optimal Doping of Diode Current Interrupters in SEMICONDUCTORS
  • 2017-12 Dynamics of the Phase Portrait of an Ellipsoidal Charged Bunch in a Nonuniform Magnetic Field in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-11 Formation of a ribbon electron beam of a planar gyrotron in the end region and near the edge of the cathode in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-11 Configuration of the thermal gap in magnetron-injection guns complying with the hydrodynamic flow model in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-09 High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process in SEMICONDUCTORS
  • 2017-09 High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency in SEMICONDUCTORS
  • 2017-08 Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers in SEMICONDUCTORS
  • 2017-08 Ion fountain in plane unipolar and bipolar diodes at relativistic velocities of electrons in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-06 On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects in SEMICONDUCTORS
  • 2017-05 Geometrized theory of two-dimensional relativistic electron beams in the φ-representation in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-05 Vicinity of an arbitrary start surface in the case of emission in the T-mode in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-02 Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors in SEMICONDUCTORS
  • 2016-11 States of a one-dimensional electron flow in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2016-10 Formation of Brillouin-type toroidal electron beams in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2016-08 The possibilities offered by use of solid insulation in complete switching gears and cross-linked polyethylene insulation under direct and alternating current in RUSSIAN ELECTRICAL ENGINEERING
  • Affiliated researchers max 50 shown

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