Innovations for High Performance Microelectronics View Homepage


Ontology type: grid:Facility  | foaf:Organization     


Organization Info

NAME

Innovations for High Performance Microelectronics

HOMEPAGE

http://www.ihp-microelectronics.com/en/start.html

ADDRESS

http://www.grid.ac/institutes/grid.424874.9/address-0

Publications in SciGraph latest 20 shown

  • 2018-12 Gate-controlled quantum dots and superconductivity in planar germanium in NATURE COMMUNICATIONS
  • 2018-12 Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices in SCIENTIFIC REPORTS
  • 2018-06 A compensation scheme for non-ideal circuit effects in biomedical impedance sensor in ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
  • 2018-04-10 Methods for Increasing the Resistance of Cryptographic Designs Against Horizontal DPA Attacks in INFORMATION AND COMMUNICATIONS SECURITY
  • 2018-01 Adaptive Per-spatial Stream Power Allocation Algorithms for Single-User MIMO-OFDM Systems in WIRELESS PERSONAL COMMUNICATIONS
  • 2017-12 Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction in NANOSCALE RESEARCH LETTERS
  • 2017-12 5G transport network requirements for the next generation fronthaul interface in EURASIP JOURNAL ON WIRELESS COMMUNICATIONS AND NETWORKING
  • 2017-01 The IoT Architectural Framework, Design Issues and Application Domains in WIRELESS PERSONAL COMMUNICATIONS
  • 2016-11 Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes in SCIENTIFIC REPORTS
  • 2016-10 Understanding the growth mechanism of graphene on Ge/Si(001) surfaces in SCIENTIFIC REPORTS
  • 2016-09 Structural and electronic properties of graphene nanoflakes on Au(111) and Ag(111) in SCIENTIFIC REPORTS
  • 2016-09 Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers in SCIENTIFIC REPORTS
  • 2016-09 Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance in SCIENTIFIC REPORTS
  • 2016-09 Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition in SCIENTIFIC REPORTS
  • 2016-09 Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene in SCIENTIFIC REPORTS
  • 2016-05 High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators in ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
  • 2016-05 A 32 ppm/°C temperature-compensated operational amplifier for application in medical device tracking in ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
  • 2016-04 Graphene growth on Ge(100)/Si(100) substrates by CVD method in SCIENTIFIC REPORTS
  • 2016-02 Robustness analysis of a device concept for edge-emitting lasers based on strained germanium in OPTICAL AND QUANTUM ELECTRONICS
  • 2015-06 Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch in JOURNAL OF ELECTRONIC TESTING
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