Electrical Properties and Microstructure of BaTiO3 upon the addition of 0.1 - 0.15 mole% Sb2O3 and 0.25 wt% Si3N4 View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-10

AUTHORS

Joon-Soo Kim

ABSTRACT

Ba1−xSbxTiO3 (x = 0.001 and 0.0015) and 0.25 wt% Si3N4-added Ba0.999Sb0.001TiO3 was studied in terms of the correlation between its electrical properties and microstructure. The electrical properties were determined by measuring the room temperature resistivity of specimens sintered at 1240 - 1380 °C in air for 1 h, while the microstructure was investigated using an optical microscope and a scanning electron microscope to evaluate the correlation between room temperature resistivity and grain size due to changes in the sintering temperature. In summary, 0.25 wt% Si3N4-added Ba0.999Sb0.001TiO3 underwent semiconductorization at lower sintering temperatures than Ba0.999Sb0.001TiO3, which was due to the discontinuous grain growth and Ba vacancy concentration in grain. More... »

PAGES

945-950

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.3938/jkps.73.945

DOI

http://dx.doi.org/10.3938/jkps.73.945

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1107387278


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