Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-08

AUTHORS

Veerendra K. Guduru, A. McCollam, J. C. Maan, U. Zeitler, S. Wenderich, M. K. Kruize, A. Brinkman, M. Huijben, G. Koster, D. H. A. Blank, G. Rijnders, H. Hilgenkamp

ABSTRACT

We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers. More... »

PAGES

437-440

Identifiers

URI

http://scigraph.springernature.com/pub.10.3938/jkps.63.437

DOI

http://dx.doi.org/10.3938/jkps.63.437

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038029046


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28 schema:description We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.
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