Finite element analysis of the effects of pixel geometry on the electrical properties in semiconductor pixel detectors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-03-14

AUTHORS

Ha Ryung Park, Hanbean Youn, Jong Chul Han, Soo Hwa Kam, Ho Kyung Kim

ABSTRACT

The development of photon-counting pixel detectors for spectral X-ray imaging is in its prime. Optimization of the pixel geometry is crucial for obtaining a reliable spectral response in each pixel element with the least distortion due to the fundamental X-ray interactions and the electrical properties. We investigated the fundamental electrical properties in semiconductor pixel detectors with respect to normalized pixel geometries: the aspect ratio (the length ratio between pixel pitch and detector thickness) and the fill factor (the area ratio between the pixel electrode and pixel extent). For various geometries, we performed three-dimensional field simulations by using a commercial finite element analysis code and obtained the potential and the field distributions. Based on the weighting potential distributions, we calculated the net charge buildup for various interaction positions within the boundary of the pixel, where a single electron-hole pair starts to drift, by assuming no charge trapping and no diffusion. For upper-limit performance, a small aspect-ratio, fill-factor design would be preferable for fast, reliable signal measurements. The results and the methodology from this study can offer insight into the optimal design of pixel geometries in photon-counting pixel detectors. More... »

PAGES

813-819

Identifiers

URI

http://scigraph.springernature.com/pub.10.3938/jkps.62.813

DOI

http://dx.doi.org/10.3938/jkps.62.813

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028123231


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