Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-03

AUTHORS

D. S. Abramkin, M. O. Petrushkov, E. A. Emel’yanov, M. A. Putyato, B. R. Semyagin, A. V. Vasev, M. Yu. Esin, I. D. Loshkarev, A. K. Gutakovskii, V. V. Preobrazhenskii, T. S. Shamirzaev

ABSTRACT

The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate. More... »

PAGES

181-186

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s8756699018020103

DOI

http://dx.doi.org/10.3103/s8756699018020103

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1104450882


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