Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-10

AUTHORS

E. A. Emel’yanov, D. F. Feklin, A. V. Vasev, M. A. Putyato, B. R. Semyagin, A. P. Vasilenko, O. P. Pchelyakov, V. V. Preobrazhenskii

ABSTRACT

The interaction of the GaSb(001) surface with fluxes of As2, As4, and Sb4 molecules is studied using reflection high-energy electron diffraction. It is shown that As2 molecules interact with a GaSb surface predominantly by an exchange mechanism, and As4 molecules by the vacancy mechanism. It is established that for the reproducible generation of In-Sb heterointerfaces in InAs/GaSb superlattices, one needs to use a flux of As4 molecules rather than As2 molecules. More... »

PAGES

452-458

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s8756699011050256

DOI

http://dx.doi.org/10.3103/s8756699011050256

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002042074


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