Fluctuation of semiconductor surface potential in Si-SiO2 structure after irradiation and subsequent annealing View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-12

AUTHORS

A. A. Sahakyan

ABSTRACT

Fluctuations of the semiconductor surface potential in a Si-SiO2 structure, caused by irradiation with different high-energy particles (50 MeV electrons and 40 keV arsenic ions) and subsequent annealing, have been studied by measuring the semiconductor interface state parameters. It is established that the fluctuation of the semiconductor surface potential decreases slightly, from 0.049 V to 0.044 V, after irradiation, while a considerable increase is observed after annealing. For the samples irradiated by arsenic ions, the increase in fluctuation is much larger (0.096 V) than that for the electron-irradiated samples (0.06 V). More... »

PAGES

252-255

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s1068337207060084

DOI

http://dx.doi.org/10.3103/s1068337207060084

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1005224988


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