Observation of the Ge-vacancy color center in microcrystalline diamond films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-06

AUTHORS

V. G. Ralchenko, V. S. Sedov, A. A. Khomich, V. S. Krivobok, S. N. Nikolaev, S. S. Savin, I. I. Vlasov, V. I. Konov

ABSTRACT

In germanium-doped thin polycrystalline diamond films grown in microwave plasma on Ge substrates, strong photoluminescence in the orange spectral region with a zero-phonon line (ZPL) at a wavelength of 602 nm is detected. The ZPL width is 4–5 nm at room temperature and 1.2 nm at T = 5K. It is assumed that the new optically active defect is a germanium–vacancy (Ge–V) complex similar to the known Si–V color center in diamond. More... »

PAGES

165-168

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s1068335615060020

DOI

http://dx.doi.org/10.3103/s1068335615060020

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029861132


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143 schema:name Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, 141190, Moscow Oblast, Russia
144 Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia
145 Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, 119991, Moscow, Russia
146 rdf:type schema:Organization
 




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