Multipurpose implanter for high technology development View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-11

AUTHORS

I. A. Ivanova, V. T. Astrelin, A. V. Burdakov, R. V. Voskoboynikov, A. I. Gorbovskii, A. A. Ivanov, V. A. Kapitonov, S. G. Konstantinov, K. N. Kuklin, S. V. Polosatkin, M. A. Tiunov

ABSTRACT

To provide basic operations of semiconductor and radiation materials technologies, a multipurpose implanter with intense ion beams was developed at the Institute of Nuclear Physics. The generated beamparameters are as follows: ions are H+, O+; C+; the ion energy is up to 200 keV; the beam current is up to 2 mA; and the implantation mode is continuous. The size of the target to be processed can reach 76 × 76 mm2. During the implanter operation, the target chamber vacuum reaches 10−4 Pa. The entire process of target irradiation is fully automated. More... »

PAGES

325

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s1068335609110037

DOI

http://dx.doi.org/10.3103/s1068335609110037

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034437980


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