Ontology type: schema:ScholarlyArticle
2015-09
AUTHORST. O. Prikhna, T. B. Serbenyuk, V. B. Sverdun, V. I. Chasnyk, M. V. Karpets’, T. V. Basyuk, J. Dellikh
ABSTRACTComposite materials based on AlN-SiC have been produced by the pressureless sintering. It has been established that in the formation of the AlN-SiC-Y3Al5O12 structure the yttrium-aluminum garnet locates along the boundaries of SiC and AlN grains, thus preventing the mutual dissolution of AlN-SiC. It has been found that the increase of the SiC amount from 20 to 50 wt % results in changes of the a and c parameters of the crystal lattice from 0.49821 to 0.49837 nm and from 0.5046 to 0.498 nm, respectively, and in increase of the composite absorbing ability from 8.8 to 31.4 dB/cm (at frequencies of 9.5–10.5 GHz). More... »
PAGES293-299
http://scigraph.springernature.com/pub.10.3103/s1063457615050019
DOIhttp://dx.doi.org/10.3103/s1063457615050019
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