Formation and crystal structure of GaSb/GaP quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-01

AUTHORS

D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. K. Gutakovskii, A. S. Kozhukhov, B. R. Semyagin, V. V. Preobrazhenskii, T. S. Shamirzaev

ABSTRACT

The atomic structure of GaSb/GaP quantum dots grown via molecular beam epitaxy on a (100) GaP surface at epitaxy temperatures of 420–470°C is investigated. It is established that, depending on morphology of the GaP growth surface, the deposition of 1 ML of GaSb leads to the formation of strained Ga(Sb, P)/GaP or fully relaxed GaSb/GaP quantum dots. The obtained heterostructures exhibit high photoluminescence efficiency. More... »

PAGES

17-22

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s1062873816010032

DOI

http://dx.doi.org/10.3103/s1062873816010032

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048828725


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