A silicon donor layer in heavily doped GaN View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-09-24

AUTHORS

I. V. Osinnykh, K. S. Zhuravlev, T. V. Malin, B. Ya. Ber, D. Yu. Kazancev

ABSTRACT

The properties of GaN layers heavily doped with silicon are investigated via photoluminescence spectroscopy. It is shown that excitons cease localizing on donors at a silicon atom concentration of 1.6 × 1019 cm−3; at higher dopant concentrations, the excitons decay. It is established that the donor binding energy falls as the silicon concentration rises. More... »

PAGES

943-945

References to SciGraph publications

  • <error retrieving object. in <ERROR RETRIEVING OBJECT
  • 1999-10. Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy in SEMICONDUCTORS
  • 1997. The Blue Laser Diode, GaN Based Light Emitters and Lasers in NONE
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.3103/s1062873814090214

    DOI

    http://dx.doi.org/10.3103/s1062873814090214

    DIMENSIONS

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