2014-09-24
AUTHORSI. V. Osinnykh, K. S. Zhuravlev, T. V. Malin, B. Ya. Ber, D. Yu. Kazancev
ABSTRACTThe properties of GaN layers heavily doped with silicon are investigated via photoluminescence spectroscopy. It is shown that excitons cease localizing on donors at a silicon atom concentration of 1.6 × 1019 cm−3; at higher dopant concentrations, the excitons decay. It is established that the donor binding energy falls as the silicon concentration rises. More... »
PAGES943-945
http://scigraph.springernature.com/pub.10.3103/s1062873814090214
DOIhttp://dx.doi.org/10.3103/s1062873814090214
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1038732389
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TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Engineering",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Materials Engineering",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Novosibirsk State University, 630090, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.4605.7",
"name": [
"Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia",
"Novosibirsk State University, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Osinnykh",
"givenName": "I. V.",
"id": "sg:person.015430144747.00",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015430144747.00"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Novosibirsk State University, 630090, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.4605.7",
"name": [
"Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia",
"Novosibirsk State University, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Zhuravlev",
"givenName": "K. S.",
"id": "sg:person.013330106605.06",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013330106605.06"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.415877.8",
"name": [
"Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Malin",
"givenName": "T. V.",
"id": "sg:person.011655146561.93",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011655146561.93"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Ber",
"givenName": "B. Ya.",
"id": "sg:person.013474671571.59",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kazancev",
"givenName": "D. Yu.",
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1134/1.1187866",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1032480849",
"https://doi.org/10.1134/1.1187866"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1007/bf02676809",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1047331901",
"https://doi.org/10.1007/bf02676809"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1007/978-3-662-03462-0",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1042465908",
"https://doi.org/10.1007/978-3-662-03462-0"
],
"type": "CreativeWork"
}
],
"datePublished": "2014-09-24",
"datePublishedReg": "2014-09-24",
"description": "The properties of GaN layers heavily doped with silicon are investigated via photoluminescence spectroscopy. It is shown that excitons cease localizing on donors at a silicon atom concentration of 1.6 \u00d7 1019 cm\u22123; at higher dopant concentrations, the excitons decay. It is established that the donor binding energy falls as the silicon concentration rises.",
"genre": "article",
"id": "sg:pub.10.3103/s1062873814090214",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136440",
"issn": [
"1062-8738",
"1934-9432"
],
"name": "Bulletin of the Russian Academy of Sciences: Physics",
"publisher": "Allerton Press",
"type": "Periodical"
},
{
"issueNumber": "9",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "78"
}
],
"keywords": [
"higher dopant concentration",
"GaN layers",
"exciton decay",
"dopant concentration",
"atom concentration",
"silicon concentration",
"donor layer",
"silicon",
"GaN",
"photoluminescence spectroscopy",
"excitons",
"decay",
"properties",
"layer",
"energy",
"spectroscopy",
"concentration",
"donors"
],
"name": "A silicon donor layer in heavily doped GaN",
"pagination": "943-945",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1038732389"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.3103/s1062873814090214"
]
}
],
"sameAs": [
"https://doi.org/10.3103/s1062873814090214",
"https://app.dimensions.ai/details/publication/pub.1038732389"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:30",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_635.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.3103/s1062873814090214"
}
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122 TRIPLES
22 PREDICATES
46 URIs
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