Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-03

AUTHORS

I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. A. Putyato, B. R. Semyagin, V. V. Preobrazhenskii, O. P. Pchelyakov

ABSTRACT

The structure of GaAs films grown on Si(001) vicinal substrates (6° rotation about 〈011〉 axis) formed in two ways of nucleation, As deposition on Si and substitution of Si monolayer by As monolayer, is studied. X-ray diffractometry is used to find that the rotation direction of a crystal lattice depends on the manner of nucleation. An optional model of the formation of film dislocation structures is proposed. More... »

PAGES

233-235

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s1062873813030234

DOI

http://dx.doi.org/10.3103/s1062873813030234

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023208326


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