Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-02

AUTHORS

V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, M. Ya. Vinnichenko, V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov

ABSTRACT

The emission of terahertz radiation from a AlGaN/GaN heterostructure under the heating of two-dimensional electrons in a lateral electric field is studied. The field dependence of the temperature of hot electrons is determined from an analysis of experimental volt-ampere characteristics. A theoretical model of the thermal radiation of hot two-dimensional electrons is considered, and the calculation results are compared with an experiment on terahertz radiation emission. More... »

PAGES

207-210

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s1062873812020281

DOI

http://dx.doi.org/10.3103/s1062873812020281

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006658055


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