Study of the formation of InGaN quantum dots on GaN surface View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-01

AUTHORS

V. V. Goncharov, M. N. Korytov, P. N. Brunkov, V. V. Lundin, E. E. Zavarin, A. F. Tsatsul’nikov, S. G. Konnikov

ABSTRACT

The effect of growth temperature on the surface morphology of InGaN layers with quantum dots (QDs) on GaN surface has been studied. The optimal conditions for formation of a dense uniform InGaN/GaN QD array with lateral sizes of 20–30 nm, which is characterized by long-wavelength photoluminescence in the range of 420–470 nm, are found. More... »

PAGES

36-38

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s1062873809010110

DOI

http://dx.doi.org/10.3103/s1062873809010110

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021440394


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