Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics View Full Text


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Article Info

DATE

2018-11

AUTHORS

A. V. Karimov, D. M. Yodgorova, F. A. Giyasova, E. M. Shpilevskiy, N. I. Usmanova

ABSTRACT

The results of a study of a photovoltaic silicon structure with two Schottky barriers are presented. It is revealed that Au–nSi–Au structures in a temperature range of room temperature to 40°C at low operating voltages of 0.1–0.2 V are characterized by a weak temperature dependence of the photocurrent. As a result, there is a gradual increase in the light current, which ensures high photosensitivity values under low light. More... »

PAGES

330-332

Identifiers

URI

http://scigraph.springernature.com/pub.10.3103/s0003701x18050109

DOI

http://dx.doi.org/10.3103/s0003701x18050109

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112178301


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