Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2014-12

AUTHORS

L. Karachevtseva, Yu. Goltviansky, O. Kolesnyk, O. Lytvynenko, O. Stronska

ABSTRACT

We investigated the contribution of electron-phonon interaction to the broadening parameter Γ of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter Γ is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field. More... »

PAGES

201-206

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.2478/s11772-014-0199-6

DOI

http://dx.doi.org/10.2478/s11772-014-0199-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037168142


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Pr., 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Karachevtseva", 
        "givenName": "L.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Pr., 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Goltviansky", 
        "givenName": "Yu.", 
        "id": "sg:person.010624160274.58", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010624160274.58"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Pr., 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kolesnyk", 
        "givenName": "O.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Pr., 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lytvynenko", 
        "givenName": "O.", 
        "id": "sg:person.012512666602.06", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012512666602.06"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Pr., 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Stronska", 
        "givenName": "O.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782606110108", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005787482", 
          "https://doi.org/10.1134/s1063782606110108"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssb.19690320114", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006789842"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.2478/s11772-010-0042-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010863912", 
          "https://doi.org/10.2478/s11772-010-0042-7"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/1521-4095(200103)13:6<377::aid-adma377>3.0.co;2-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011135691"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.apsusc.2008.09.038", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014399395"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.2478/s11772-006-0026-9", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037312514", 
          "https://doi.org/10.2478/s11772-006-0026-9"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.apsusc.2010.11.016", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037803922"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssb.19670200128", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044700379"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.366536", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057995274"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.372017", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058006418"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1070/pu2002v045n12abeh001189", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058173463"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.145.628", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060432855"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.145.628", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060432855"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.398672", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061094442"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-12", 
    "datePublishedReg": "2014-12-01", 
    "description": "We investigated the contribution of electron-phonon interaction to the broadening parameter \u0393 of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter \u0393 is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.", 
    "genre": "research_article", 
    "id": "sg:pub.10.2478/s11772-014-0199-6", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1140848", 
        "issn": [
          "1230-3402", 
          "1896-3757"
        ], 
        "name": "Opto-Electronics Review", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "22"
      }
    ], 
    "name": "Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings", 
    "pagination": "201-206", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "b10e49d95784e7d44519996270f827f19abdcddb116675558b7824f96f135e08"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.2478/s11772-014-0199-6"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1037168142"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.2478/s11772-014-0199-6", 
      "https://app.dimensions.ai/details/publication/pub.1037168142"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T00:09", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8695_00000482.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.2478/s11772-014-0199-6"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.2478/s11772-014-0199-6'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.2478/s11772-014-0199-6'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.2478/s11772-014-0199-6'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.2478/s11772-014-0199-6'


 

This table displays all metadata directly associated to this object as RDF triples.

128 TRIPLES      21 PREDICATES      40 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.2478/s11772-014-0199-6 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author Nce2938c80eaf4ab39369d0acac99ba0b
4 schema:citation sg:pub.10.1134/s1063782606110108
5 sg:pub.10.2478/s11772-006-0026-9
6 sg:pub.10.2478/s11772-010-0042-7
7 https://doi.org/10.1002/1521-4095(200103)13:6<377::aid-adma377>3.0.co;2-x
8 https://doi.org/10.1002/pssb.19670200128
9 https://doi.org/10.1002/pssb.19690320114
10 https://doi.org/10.1016/j.apsusc.2008.09.038
11 https://doi.org/10.1016/j.apsusc.2010.11.016
12 https://doi.org/10.1063/1.366536
13 https://doi.org/10.1063/1.372017
14 https://doi.org/10.1070/pu2002v045n12abeh001189
15 https://doi.org/10.1103/physrev.145.628
16 https://doi.org/10.1109/16.398672
17 schema:datePublished 2014-12
18 schema:datePublishedReg 2014-12-01
19 schema:description We investigated the contribution of electron-phonon interaction to the broadening parameter Γ of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter Γ is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.
20 schema:genre research_article
21 schema:inLanguage en
22 schema:isAccessibleForFree true
23 schema:isPartOf N24eb7f6c5dc349eaaa6fc23b025103ac
24 Nba0425a532c4455caf0c0163628d27e3
25 sg:journal.1140848
26 schema:name Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings
27 schema:pagination 201-206
28 schema:productId N4925971d8c18436f82513642756c16fd
29 N6d89495043394f89b91dd3a754bf57b5
30 Ncc272885a7e54f14bcf45fbbafc1e3e5
31 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037168142
32 https://doi.org/10.2478/s11772-014-0199-6
33 schema:sdDatePublished 2019-04-11T00:09
34 schema:sdLicense https://scigraph.springernature.com/explorer/license/
35 schema:sdPublisher N06d65b98f5584114ad2b7662fdf18fa1
36 schema:url http://link.springer.com/10.2478/s11772-014-0199-6
37 sgo:license sg:explorer/license/
38 sgo:sdDataset articles
39 rdf:type schema:ScholarlyArticle
40 N06d65b98f5584114ad2b7662fdf18fa1 schema:name Springer Nature - SN SciGraph project
41 rdf:type schema:Organization
42 N08630ba7f893427b8f27bca1e33362d3 rdf:first sg:person.010624160274.58
43 rdf:rest N68f41d0b8982480588d0bd4c9ed72112
44 N24eb7f6c5dc349eaaa6fc23b025103ac schema:volumeNumber 22
45 rdf:type schema:PublicationVolume
46 N3b64eba8d6fd4e47ab944c55b31f9d90 schema:affiliation https://www.grid.ac/institutes/grid.466789.2
47 schema:familyName Kolesnyk
48 schema:givenName O.
49 rdf:type schema:Person
50 N4925971d8c18436f82513642756c16fd schema:name readcube_id
51 schema:value b10e49d95784e7d44519996270f827f19abdcddb116675558b7824f96f135e08
52 rdf:type schema:PropertyValue
53 N5e7fe1a2b27f4ceab190414e667e6a63 rdf:first sg:person.012512666602.06
54 rdf:rest N970d2ddcd0f840df896b4a1b26274a84
55 N68f41d0b8982480588d0bd4c9ed72112 rdf:first N3b64eba8d6fd4e47ab944c55b31f9d90
56 rdf:rest N5e7fe1a2b27f4ceab190414e667e6a63
57 N6d89495043394f89b91dd3a754bf57b5 schema:name dimensions_id
58 schema:value pub.1037168142
59 rdf:type schema:PropertyValue
60 N970d2ddcd0f840df896b4a1b26274a84 rdf:first Ncf77f652790e477ab1984d27a69a7953
61 rdf:rest rdf:nil
62 Nba0425a532c4455caf0c0163628d27e3 schema:issueNumber 4
63 rdf:type schema:PublicationIssue
64 Ncc272885a7e54f14bcf45fbbafc1e3e5 schema:name doi
65 schema:value 10.2478/s11772-014-0199-6
66 rdf:type schema:PropertyValue
67 Nce2938c80eaf4ab39369d0acac99ba0b rdf:first Nff23c9dc6b6a414aa729e681725ad20d
68 rdf:rest N08630ba7f893427b8f27bca1e33362d3
69 Ncf77f652790e477ab1984d27a69a7953 schema:affiliation https://www.grid.ac/institutes/grid.466789.2
70 schema:familyName Stronska
71 schema:givenName O.
72 rdf:type schema:Person
73 Nff23c9dc6b6a414aa729e681725ad20d schema:affiliation https://www.grid.ac/institutes/grid.466789.2
74 schema:familyName Karachevtseva
75 schema:givenName L.
76 rdf:type schema:Person
77 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
78 schema:name Physical Sciences
79 rdf:type schema:DefinedTerm
80 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
81 schema:name Other Physical Sciences
82 rdf:type schema:DefinedTerm
83 sg:journal.1140848 schema:issn 1230-3402
84 1896-3757
85 schema:name Opto-Electronics Review
86 rdf:type schema:Periodical
87 sg:person.010624160274.58 schema:affiliation https://www.grid.ac/institutes/grid.466789.2
88 schema:familyName Goltviansky
89 schema:givenName Yu.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010624160274.58
91 rdf:type schema:Person
92 sg:person.012512666602.06 schema:affiliation https://www.grid.ac/institutes/grid.466789.2
93 schema:familyName Lytvynenko
94 schema:givenName O.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012512666602.06
96 rdf:type schema:Person
97 sg:pub.10.1134/s1063782606110108 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005787482
98 https://doi.org/10.1134/s1063782606110108
99 rdf:type schema:CreativeWork
100 sg:pub.10.2478/s11772-006-0026-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037312514
101 https://doi.org/10.2478/s11772-006-0026-9
102 rdf:type schema:CreativeWork
103 sg:pub.10.2478/s11772-010-0042-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010863912
104 https://doi.org/10.2478/s11772-010-0042-7
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1002/1521-4095(200103)13:6<377::aid-adma377>3.0.co;2-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1011135691
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1002/pssb.19670200128 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044700379
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1002/pssb.19690320114 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006789842
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1016/j.apsusc.2008.09.038 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014399395
113 rdf:type schema:CreativeWork
114 https://doi.org/10.1016/j.apsusc.2010.11.016 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037803922
115 rdf:type schema:CreativeWork
116 https://doi.org/10.1063/1.366536 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057995274
117 rdf:type schema:CreativeWork
118 https://doi.org/10.1063/1.372017 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058006418
119 rdf:type schema:CreativeWork
120 https://doi.org/10.1070/pu2002v045n12abeh001189 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058173463
121 rdf:type schema:CreativeWork
122 https://doi.org/10.1103/physrev.145.628 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060432855
123 rdf:type schema:CreativeWork
124 https://doi.org/10.1109/16.398672 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061094442
125 rdf:type schema:CreativeWork
126 https://www.grid.ac/institutes/grid.466789.2 schema:alternateName Institute of Semiconductor Physics
127 schema:name V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Pr., 03028, Kyiv, Ukraine
128 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...