Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in ... View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2014-12

AUTHORS

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

ABSTRACT

Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg1−xCdxTe (x = 0.22–0.23 and 0.31–0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K. More... »

PAGES

236-244

References to SciGraph publications

Journal

TITLE

Opto-Electronics Review

ISSUE

4

VOLUME

22

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.2478/s11772-014-0198-7

DOI

http://dx.doi.org/10.2478/s11772-014-0198-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035546680


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