MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2014-06

AUTHORS

P. Martyniuk, A. Koźniewski, A. Kębłowski, W. Gawron, A. Rogalski

ABSTRACT

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N+pP+n+ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ∼8.7×1010 cmHz1/2/W, responsivity ∼1.72 A/W and time response ∼ 145 ps (V = 200 mV). More... »

PAGES

118-126

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.2478/s11772-014-0186-y

DOI

http://dx.doi.org/10.2478/s11772-014-0186-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050342230


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