1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures. View Full Text


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Article Info

DATE

2003

AUTHORS

V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.P. Vasil'ev, E.V. Nikitina, E.S. Semenova, N.V. Kryzhanovskaya, Yu.G. Musikhin, Yu.M. Shernyakov, M.V. Maximov, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov

ABSTRACT

ABSTRACT 1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm 2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm 2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers. More... »

PAGES

t7.2/z7.2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-794-t7.2/z7.2

DOI

http://dx.doi.org/10.1557/proc-794-t7.2/z7.2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067957260


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V.M.", 
        "id": "sg:person.010616411412.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhukov", 
        "givenName": "A.E.", 
        "id": "sg:person.011315427765.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kovsh", 
        "givenName": "A.R.", 
        "id": "sg:person.015242115543.03", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maleev", 
        "givenName": "N.A.", 
        "id": "sg:person.011317077151.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mikhrin", 
        "givenName": "S.S.", 
        "id": "sg:person.011622563643.98", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011622563643.98"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil'ev", 
        "givenName": "A.P.", 
        "id": "sg:person.014334030356.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikitina", 
        "givenName": "E.V.", 
        "id": "sg:person.012555247104.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012555247104.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semenova", 
        "givenName": "E.S.", 
        "id": "sg:person.010767406335.85", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010767406335.85"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kryzhanovskaya", 
        "givenName": "N.V.", 
        "id": "sg:person.014661303112.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014661303112.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Musikhin", 
        "givenName": "Yu.G.", 
        "id": "sg:person.014603755431.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shernyakov", 
        "givenName": "Yu.M.", 
        "id": "sg:person.014411372640.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maximov", 
        "givenName": "M.V.", 
        "id": "sg:person.011741603014.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011741603014.49"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institut f\u00fcr Festk\u00f6rperphysik, Technische Universit\u00e4t Berlin, PN5\u20132, Hardenbergst. 36, D-10623 Berlin, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6734.6", 
          "name": [
            "Institut f\u00fcr Festk\u00f6rperphysik, Technische Universit\u00e4t Berlin, PN5\u20132, Hardenbergst. 36, D-10623 Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ledentsov", 
        "givenName": "N.N.", 
        "id": "sg:person.012545437702.41", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012545437702.41"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institut f\u00fcr Festk\u00f6rperphysik, Technische Universit\u00e4t Berlin, PN5\u20132, Hardenbergst. 36, D-10623 Berlin, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6734.6", 
          "name": [
            "Institut f\u00fcr Festk\u00f6rperphysik, Technische Universit\u00e4t Berlin, PN5\u20132, Hardenbergst. 36, D-10623 Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bimberg", 
        "givenName": "D.", 
        "id": "sg:person.01146311613.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01146311613.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Alferov", 
        "givenName": "Zh.I.", 
        "id": "sg:person.015733451717.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015733451717.13"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2003", 
    "datePublishedReg": "2003-01-01", 
    "description": "ABSTRACT  1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm 2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44\u20131.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55\u201360K was estimated. High internal quantum efficiency (\u03b7>60%)and low internal losses (\u03b1=3\u20134 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (\u223c40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (\u03bb=1.29 micron) and 400 A/cm 2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers. ", 
    "genre": "article", 
    "id": "sg:pub.10.1557/proc-794-t7.2/z7.2", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1297379", 
        "issn": [
          "0272-9172", 
          "2059-8521"
        ], 
        "name": "MRS Advances", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "794"
      }
    ], 
    "keywords": [
      "kA/", 
      "GaAs substrates", 
      "InGaAs layers", 
      "high internal quantum efficiency", 
      "InGaAs/GaAs heterostructures", 
      "density of dislocations", 
      "low internal loss", 
      "external differential efficiency", 
      "InAs quantum dot lasers", 
      "quantum dots", 
      "internal quantum efficiency", 
      "active region", 
      "relaxation layer", 
      "room temperature threshold", 
      "quantum dot lasers", 
      "active layer", 
      "output power", 
      "high indium content", 
      "current density", 
      "stripe lasers", 
      "InAs quantum dots", 
      "optical losses", 
      "internal losses", 
      "InGaAlAs quantum", 
      "GaAs heterostructures", 
      "quantum wells", 
      "dot lasers", 
      "indium content", 
      "quantum efficiency", 
      "room temperature", 
      "differential efficiency", 
      "wide stripes", 
      "layer", 
      "laser", 
      "emission wavelength", 
      "characteristic temperature", 
      "range emission", 
      "wavelength", 
      "temperature", 
      "growth regime", 
      "dots", 
      "microns", 
      "efficiency", 
      "substrate", 
      "InGaAs", 
      "heterostructures", 
      "MBE", 
      "density", 
      "InGaAlAs", 
      "GaAs", 
      "quantum", 
      "promising approach", 
      "regime", 
      "interface", 
      "InAs", 
      "dislocations", 
      "temperature threshold", 
      "emission", 
      "power", 
      "lattice", 
      "wells", 
      "stripes", 
      "plane", 
      "loss", 
      "region", 
      "content", 
      "threshold", 
      "approach", 
      "use", 
      "Abstract"
    ], 
    "name": "1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.", 
    "pagination": "t7.2/z7.2", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1067957260"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1557/proc-794-t7.2/z7.2"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1557/proc-794-t7.2/z7.2", 
      "https://app.dimensions.ai/details/publication/pub.1067957260"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:22", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_372.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1557/proc-794-t7.2/z7.2"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

226 TRIPLES      21 PREDICATES      95 URIs      87 LITERALS      5 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1557/proc-794-t7.2/z7.2 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N13c65f6ec9c64bcba1396fba9f7811d6
4 schema:datePublished 2003
5 schema:datePublishedReg 2003-01-01
6 schema:description ABSTRACT 1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm 2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm 2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N0fc9ec37d5fe429eb6b1a54dcff80f58
11 sg:journal.1297379
12 schema:keywords Abstract
13 GaAs
14 GaAs heterostructures
15 GaAs substrates
16 InAs
17 InAs quantum dot lasers
18 InAs quantum dots
19 InGaAlAs
20 InGaAlAs quantum
21 InGaAs
22 InGaAs layers
23 InGaAs/GaAs heterostructures
24 MBE
25 active layer
26 active region
27 approach
28 characteristic temperature
29 content
30 current density
31 density
32 density of dislocations
33 differential efficiency
34 dislocations
35 dot lasers
36 dots
37 efficiency
38 emission
39 emission wavelength
40 external differential efficiency
41 growth regime
42 heterostructures
43 high indium content
44 high internal quantum efficiency
45 indium content
46 interface
47 internal losses
48 internal quantum efficiency
49 kA/
50 laser
51 lattice
52 layer
53 loss
54 low internal loss
55 microns
56 optical losses
57 output power
58 plane
59 power
60 promising approach
61 quantum
62 quantum dot lasers
63 quantum dots
64 quantum efficiency
65 quantum wells
66 range emission
67 regime
68 region
69 relaxation layer
70 room temperature
71 room temperature threshold
72 stripe lasers
73 stripes
74 substrate
75 temperature
76 temperature threshold
77 threshold
78 use
79 wavelength
80 wells
81 wide stripes
82 schema:name 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.
83 schema:pagination t7.2/z7.2
84 schema:productId N8902424bf32a4c7fb657841311a83f28
85 Nc73ca10a458f405ba2b448a08ef2d42a
86 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067957260
87 https://doi.org/10.1557/proc-794-t7.2/z7.2
88 schema:sdDatePublished 2022-05-20T07:22
89 schema:sdLicense https://scigraph.springernature.com/explorer/license/
90 schema:sdPublisher Nb176fed6041d4571a4515ae7481937b8
91 schema:url https://doi.org/10.1557/proc-794-t7.2/z7.2
92 sgo:license sg:explorer/license/
93 sgo:sdDataset articles
94 rdf:type schema:ScholarlyArticle
95 N048d7800fe014d118f3e3a0a6e39637c rdf:first sg:person.012545437702.41
96 rdf:rest N5fdd9b2d0bcb460aaa4da59749c8081f
97 N0fc9ec37d5fe429eb6b1a54dcff80f58 schema:volumeNumber 794
98 rdf:type schema:PublicationVolume
99 N13c65f6ec9c64bcba1396fba9f7811d6 rdf:first sg:person.010616411412.30
100 rdf:rest Nc8075c995cc44dadbb77dfc0f1b0af9a
101 N14cdd3b7494b47159367c0a466eabbcf rdf:first sg:person.014603755431.88
102 rdf:rest Nb3ded125cebb46f7a19582373cb2e714
103 N3e55232925e14580b9cb6dc482809390 rdf:first sg:person.011622563643.98
104 rdf:rest N8f8003ea109f493c8c83d3e082a201fa
105 N4522df05349a4b9881717280b2d2bc12 rdf:first sg:person.011741603014.49
106 rdf:rest N048d7800fe014d118f3e3a0a6e39637c
107 N5fdd9b2d0bcb460aaa4da59749c8081f rdf:first sg:person.01146311613.24
108 rdf:rest N6f0cca246a2f446096881004475d8559
109 N6f0cca246a2f446096881004475d8559 rdf:first sg:person.015733451717.13
110 rdf:rest rdf:nil
111 N7bf0f08f94aa4bbbb44ab9dc65a921ff rdf:first sg:person.012555247104.74
112 rdf:rest N7c1d9dcbc9154e379cb36a402ce4126c
113 N7c1d9dcbc9154e379cb36a402ce4126c rdf:first sg:person.010767406335.85
114 rdf:rest Nb285da2bf89144e4b14f44f03134d9c5
115 N8902424bf32a4c7fb657841311a83f28 schema:name doi
116 schema:value 10.1557/proc-794-t7.2/z7.2
117 rdf:type schema:PropertyValue
118 N8f8003ea109f493c8c83d3e082a201fa rdf:first sg:person.014334030356.12
119 rdf:rest N7bf0f08f94aa4bbbb44ab9dc65a921ff
120 N9d6b5a2a7c1f4bb19d8ade483d67de00 rdf:first sg:person.011317077151.34
121 rdf:rest N3e55232925e14580b9cb6dc482809390
122 Nb176fed6041d4571a4515ae7481937b8 schema:name Springer Nature - SN SciGraph project
123 rdf:type schema:Organization
124 Nb285da2bf89144e4b14f44f03134d9c5 rdf:first sg:person.014661303112.10
125 rdf:rest N14cdd3b7494b47159367c0a466eabbcf
126 Nb3ded125cebb46f7a19582373cb2e714 rdf:first sg:person.014411372640.54
127 rdf:rest N4522df05349a4b9881717280b2d2bc12
128 Nc73ca10a458f405ba2b448a08ef2d42a schema:name dimensions_id
129 schema:value pub.1067957260
130 rdf:type schema:PropertyValue
131 Nc8075c995cc44dadbb77dfc0f1b0af9a rdf:first sg:person.011315427765.17
132 rdf:rest Nf65ffb06e42e49c4b3b02257f2ad585f
133 Nf65ffb06e42e49c4b3b02257f2ad585f rdf:first sg:person.015242115543.03
134 rdf:rest N9d6b5a2a7c1f4bb19d8ade483d67de00
135 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
136 schema:name Engineering
137 rdf:type schema:DefinedTerm
138 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
139 schema:name Materials Engineering
140 rdf:type schema:DefinedTerm
141 sg:journal.1297379 schema:issn 0272-9172
142 2059-8521
143 schema:name MRS Advances
144 schema:publisher Springer Nature
145 rdf:type schema:Periodical
146 sg:person.010616411412.30 schema:affiliation grid-institutes:grid.423485.c
147 schema:familyName Ustinov
148 schema:givenName V.M.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30
150 rdf:type schema:Person
151 sg:person.010767406335.85 schema:affiliation grid-institutes:grid.423485.c
152 schema:familyName Semenova
153 schema:givenName E.S.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010767406335.85
155 rdf:type schema:Person
156 sg:person.011315427765.17 schema:affiliation grid-institutes:grid.423485.c
157 schema:familyName Zhukov
158 schema:givenName A.E.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17
160 rdf:type schema:Person
161 sg:person.011317077151.34 schema:affiliation grid-institutes:grid.423485.c
162 schema:familyName Maleev
163 schema:givenName N.A.
164 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34
165 rdf:type schema:Person
166 sg:person.01146311613.24 schema:affiliation grid-institutes:grid.6734.6
167 schema:familyName Bimberg
168 schema:givenName D.
169 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01146311613.24
170 rdf:type schema:Person
171 sg:person.011622563643.98 schema:affiliation grid-institutes:grid.423485.c
172 schema:familyName Mikhrin
173 schema:givenName S.S.
174 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011622563643.98
175 rdf:type schema:Person
176 sg:person.011741603014.49 schema:affiliation grid-institutes:grid.423485.c
177 schema:familyName Maximov
178 schema:givenName M.V.
179 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011741603014.49
180 rdf:type schema:Person
181 sg:person.012545437702.41 schema:affiliation grid-institutes:grid.6734.6
182 schema:familyName Ledentsov
183 schema:givenName N.N.
184 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012545437702.41
185 rdf:type schema:Person
186 sg:person.012555247104.74 schema:affiliation grid-institutes:grid.423485.c
187 schema:familyName Nikitina
188 schema:givenName E.V.
189 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012555247104.74
190 rdf:type schema:Person
191 sg:person.014334030356.12 schema:affiliation grid-institutes:grid.423485.c
192 schema:familyName Vasil'ev
193 schema:givenName A.P.
194 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12
195 rdf:type schema:Person
196 sg:person.014411372640.54 schema:affiliation grid-institutes:grid.423485.c
197 schema:familyName Shernyakov
198 schema:givenName Yu.M.
199 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54
200 rdf:type schema:Person
201 sg:person.014603755431.88 schema:affiliation grid-institutes:grid.423485.c
202 schema:familyName Musikhin
203 schema:givenName Yu.G.
204 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88
205 rdf:type schema:Person
206 sg:person.014661303112.10 schema:affiliation grid-institutes:grid.423485.c
207 schema:familyName Kryzhanovskaya
208 schema:givenName N.V.
209 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014661303112.10
210 rdf:type schema:Person
211 sg:person.015242115543.03 schema:affiliation grid-institutes:grid.423485.c
212 schema:familyName Kovsh
213 schema:givenName A.R.
214 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03
215 rdf:type schema:Person
216 sg:person.015733451717.13 schema:affiliation grid-institutes:grid.423485.c
217 schema:familyName Alferov
218 schema:givenName Zh.I.
219 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015733451717.13
220 rdf:type schema:Person
221 grid-institutes:grid.423485.c schema:alternateName Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
222 schema:name Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
223 rdf:type schema:Organization
224 grid-institutes:grid.6734.6 schema:alternateName Institut für Festkörperphysik, Technische Universität Berlin, PN5–2, Hardenbergst. 36, D-10623 Berlin, Germany
225 schema:name Institut für Festkörperphysik, Technische Universität Berlin, PN5–2, Hardenbergst. 36, D-10623 Berlin, Germany
226 rdf:type schema:Organization
 




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