Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots. View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002

AUTHORS

A. M. Mintairov, P. A. Blagnov, O. V. Kovalenkov, C. Li, J. L. Merz, S. Oktyabrsky, K. Sun, V. Tokranov, A. S. Vlasov, D. A. Vinokurov

ABSTRACT

ABSTRACT Experimental and theoretical investigations of high-energy shifts of single InAs, InGaAs, InAlAs and InP quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip are reported. “Pressure” coefficients of 0.65–3.5 meV/nm have been measured for ground state emission lines in agreement with numerical calculations. We show that the observed increase of the tip-induced energy shift with increasing aperture diameter is caused by a decrease of the uniaxial strain component. We also report the effect of emission instability of single QD emission intensity under tip-induced pressure. More... »

PAGES

e7.4

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-737-e7.4

DOI

http://dx.doi.org/10.1557/proc-737-e7.4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067954397


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