Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys View Full Text


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Article Info

DATE

2001

AUTHORS

A. M. Mintairov, P. A. Blagnov, T. Kosel, J. L. Merz, V. M. Ustinov, A. S. Vlasov, R. E. Cook.

ABSTRACT

We used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appearance of narrow emission lines (halfwidth 0.5−2 meV) at temperatures below 70K. We estimated the size, density, and nitrogen excess of individual compositional fluctuations (clusters), revealing phaseseparation effects in the distribution of nitrogen in GaAsN and InGaAsN. We found a dramatic difference in the Zeeman splitting of cluster lines between GaAsN and InGaAsN, indicating a strong effect of In on the exciton g -factor. More... »

PAGES

h2.8.1

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-692-h2.8.1

DOI

http://dx.doi.org/10.1557/proc-692-h2.8.1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067952461


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