Effect of substitutional doping on the thermal conductivity of Ti-based Half-Heusler compounds View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000

AUTHORS

S. Bhattacharya, V. Ponnambalam, A.L. Pope, Y. Xia, S.J. Poon, R.T. Littleton, T.M. Tritt

ABSTRACT

ABSTRACT Half-Heusler alloys with the general formula TiNiSn 1-X Sb X are currently being investigated for their potential as thermoelectric (TE) materials. 1,2,3,4 These materials exhibit high thermopower (40–250μV/K) and low electrical resistivity values (0.1 - 8mΩ-cm) which yields a relatively large power factor (α 2 σT) of (0.2 - 1.0) W/m♦K at room temperature. The challenge is to reduce the relatively high thermal conductivity (≈ 10 W/m♦K) that is evident in these materials. The focus of this research is to investigate the effect of Sb-doping on the Sn site and Zr doping on the Ti site on the thermal conductivity of TiNiSn. Highly doped half-Heusler alloys have shown marked reduction in thermal conductivity to values on the order of 3.5 - 4.5 W/m♦K. Systematic determination of thermal conductivity in a variety of these doped materials as well as Sb and Zr doped TiNiSn are presented and discussed. More... »

PAGES

z5.2

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-626-z5.2

DOI

http://dx.doi.org/10.1557/proc-626-z5.2

DIMENSIONS

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