Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999

AUTHORS

A. M. Mintairov, A. S. Vlasov, J. L. Merz, D. Korakakis, T. D. Moustakas, A. O. Osinsky, R. Gaska, M. B. Smirnov

ABSTRACT

ABSTRACT We report an experimental (infrared reflectance spectroscopy) and theoretical study of the polar optical phonons in hexagonal ternary nitride compounds: AlN m /GaN n (n=2-8, m=4, 8) superlattices (SL) and spontaneously ordered Al x Ga 1−x N (x=0.08–0.55) alloys. In infrared (IR) reflectivity spectra we revealed two modes having strong LO-TO splitting (20–150 cm −1 ), and several modes, having a small (1–3 cm −1 ) LO-TO splitting. All modes have a very high damping parameter ≥20 cm −1 . The unusual observation is the negative value of the oscillator strength for the weak IR mode at ∼690 cm −1 , suggesting possible lattice instability, consistent with high damping observed. We found from lattice dynamical calculations that weak IR active modes correspond to modes localized at GaN-AlN interfaces. Our analysis has shown that an anomalous mode is induced by the disorder effects and arises due to strong overlapping of the LO-TO phonon branches of the bulk GaN and AlN. In SL samples the anomalous mode corresponds to phonons localized on interface inhomogenities. More... »

PAGES

427

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-572-427

DOI

http://dx.doi.org/10.1557/proc-572-427

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067945752


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