Hydrogen'S Effect on Stability of Undoped A-Si:H Under Light Soaking View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998

AUTHORS

O.A. Golikova, M.M. Kazanin, A.N. Kuznetsov, V.Kh. Kudoyarova, G.J. Adriaenssens, W. Grevendonk, A. Eliat

ABSTRACT

ABSTRACT Light-soaking kinetics of photoconductivity at room temperature for undoped a-Si:H films deposited by rf-plasma enhanced chemical vapor deposition and by dc-magnetron assisted decomposition at T 8 = 300 and 350°C have been investigated. The rate of degradation has been expressed by the value of exponent of the power law: σ ph ∼t −y . The hydrogen content in the films, the type of Si-H bonds and their contribution as well as the Fermi level position were controlled by changes in the deposition conditions. Hydrogen's effect on the y value was shown for the different cases. The films, having γ=0, were identified. More... »

PAGES

625

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-507-625

DOI

http://dx.doi.org/10.1557/proc-507-625

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067941507


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