Ontology type: schema:ScholarlyArticle
1998
AUTHORSO.A. Golikova, M.M. Kazanin, A.N. Kuznetsov, V.Kh. Kudoyarova, G.J. Adriaenssens, W. Grevendonk, A. Eliat
ABSTRACTABSTRACT Light-soaking kinetics of photoconductivity at room temperature for undoped a-Si:H films deposited by rf-plasma enhanced chemical vapor deposition and by dc-magnetron assisted decomposition at T 8 = 300 and 350°C have been investigated. The rate of degradation has been expressed by the value of exponent of the power law: σ ph ∼t −y . The hydrogen content in the films, the type of Si-H bonds and their contribution as well as the Fermi level position were controlled by changes in the deposition conditions. Hydrogen's effect on the y value was shown for the different cases. The films, having γ=0, were identified. More... »
PAGES625
http://scigraph.springernature.com/pub.10.1557/proc-507-625
DOIhttp://dx.doi.org/10.1557/proc-507-625
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