Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997

AUTHORS

O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, M. M. Kazanin, G. J. Adriaenssens, H. Herremans

ABSTRACT

ABSTRACT A systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH 4 decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH 2 )n chains. More... »

PAGES

519

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-467-519

DOI

http://dx.doi.org/10.1557/proc-467-519

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067938455


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, .", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, ."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Golikova", 
        "givenName": "O. A.", 
        "id": "sg:person.010266073777.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010266073777.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, .", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, ."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuznetsov", 
        "givenName": "A. N.", 
        "id": "sg:person.012436124105.42", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, .", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, ."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kudoyarova", 
        "givenName": "V. Kh.", 
        "id": "sg:person.013415737035.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013415737035.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, .", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, ."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kazanin", 
        "givenName": "M. M.", 
        "id": "sg:person.012671615173.91", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012671615173.91"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium, .", 
          "id": "http://www.grid.ac/institutes/grid.5596.f", 
          "name": [
            "K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium, ."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Adriaenssens", 
        "givenName": "G. J.", 
        "id": "sg:person.013103115063.85", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013103115063.85"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium, .", 
          "id": "http://www.grid.ac/institutes/grid.5596.f", 
          "name": [
            "K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium, ."
          ], 
          "type": "Organization"
        }, 
        "familyName": "Herremans", 
        "givenName": "H.", 
        "id": "sg:person.010067164151.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010067164151.66"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1997", 
    "datePublishedReg": "1997-01-01", 
    "description": "ABSTRACT  A systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH 4 decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH 2 )n chains. ", 
    "genre": "article", 
    "id": "sg:pub.10.1557/proc-467-519", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1297379", 
        "issn": [
          "0272-9172", 
          "2059-8521"
        ], 
        "name": "MRS Advances", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "467"
      }
    ], 
    "keywords": [
      "film microstructure", 
      "DC magnetron", 
      "substrate temperature", 
      "gas flow", 
      "gas pressure", 
      "mobility life-time products", 
      "bond density", 
      "SiH 2", 
      "Si", 
      "electronic parameters", 
      "microstructure", 
      "films", 
      "parameters", 
      "mounting", 
      "time product", 
      "temperature", 
      "hydrogen", 
      "flow", 
      "systematic study", 
      "structure", 
      "photoconductivity", 
      "density", 
      "decomposition", 
      "pressure", 
      "products", 
      "Abstract", 
      "study", 
      "correlation", 
      "chain"
    ], 
    "name": "Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD", 
    "pagination": "519", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1067938455"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1557/proc-467-519"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1557/proc-467-519", 
      "https://app.dimensions.ai/details/publication/pub.1067938455"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:20", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_304.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1557/proc-467-519"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

122 TRIPLES      21 PREDICATES      54 URIs      46 LITERALS      5 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1557/proc-467-519 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nf99d2fd02c5547fe951efddcfd9eb8a2
4 schema:datePublished 1997
5 schema:datePublishedReg 1997-01-01
6 schema:description ABSTRACT A systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH 4 decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH 2 )n chains.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf Ne7936192da2b4ab891f63e26c9f04494
11 sg:journal.1297379
12 schema:keywords Abstract
13 DC magnetron
14 Si
15 SiH 2
16 bond density
17 chain
18 correlation
19 decomposition
20 density
21 electronic parameters
22 film microstructure
23 films
24 flow
25 gas flow
26 gas pressure
27 hydrogen
28 microstructure
29 mobility life-time products
30 mounting
31 parameters
32 photoconductivity
33 pressure
34 products
35 structure
36 study
37 substrate temperature
38 systematic study
39 temperature
40 time product
41 schema:name Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD
42 schema:pagination 519
43 schema:productId N24afed3f0a2f4ff08bc5e6ae4d677f09
44 Ncaf72d95f08842329047ce081c39918e
45 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067938455
46 https://doi.org/10.1557/proc-467-519
47 schema:sdDatePublished 2022-05-20T07:20
48 schema:sdLicense https://scigraph.springernature.com/explorer/license/
49 schema:sdPublisher Nc266c4655d5c4d63ab5c963c9d9780d4
50 schema:url https://doi.org/10.1557/proc-467-519
51 sgo:license sg:explorer/license/
52 sgo:sdDataset articles
53 rdf:type schema:ScholarlyArticle
54 N24afed3f0a2f4ff08bc5e6ae4d677f09 schema:name dimensions_id
55 schema:value pub.1067938455
56 rdf:type schema:PropertyValue
57 N45ebfed3b7ac442d9b9f8d41dcf56b50 rdf:first sg:person.012436124105.42
58 rdf:rest Na87dbab0053f415ca0b82c26a0113f95
59 Na87dbab0053f415ca0b82c26a0113f95 rdf:first sg:person.013415737035.88
60 rdf:rest Nb2929f86cde740059c0e9eaf677d0a3e
61 Nae8b340301fe49c8934358a66141f7ba rdf:first sg:person.010067164151.66
62 rdf:rest rdf:nil
63 Nb2929f86cde740059c0e9eaf677d0a3e rdf:first sg:person.012671615173.91
64 rdf:rest Nf802b99a3ced4300bb354af39f1b3349
65 Nc266c4655d5c4d63ab5c963c9d9780d4 schema:name Springer Nature - SN SciGraph project
66 rdf:type schema:Organization
67 Ncaf72d95f08842329047ce081c39918e schema:name doi
68 schema:value 10.1557/proc-467-519
69 rdf:type schema:PropertyValue
70 Ne7936192da2b4ab891f63e26c9f04494 schema:volumeNumber 467
71 rdf:type schema:PublicationVolume
72 Nf802b99a3ced4300bb354af39f1b3349 rdf:first sg:person.013103115063.85
73 rdf:rest Nae8b340301fe49c8934358a66141f7ba
74 Nf99d2fd02c5547fe951efddcfd9eb8a2 rdf:first sg:person.010266073777.04
75 rdf:rest N45ebfed3b7ac442d9b9f8d41dcf56b50
76 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
77 schema:name Engineering
78 rdf:type schema:DefinedTerm
79 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
80 schema:name Materials Engineering
81 rdf:type schema:DefinedTerm
82 sg:journal.1297379 schema:issn 0272-9172
83 2059-8521
84 schema:name MRS Advances
85 schema:publisher Springer Nature
86 rdf:type schema:Periodical
87 sg:person.010067164151.66 schema:affiliation grid-institutes:grid.5596.f
88 schema:familyName Herremans
89 schema:givenName H.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010067164151.66
91 rdf:type schema:Person
92 sg:person.010266073777.04 schema:affiliation grid-institutes:grid.423485.c
93 schema:familyName Golikova
94 schema:givenName O. A.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010266073777.04
96 rdf:type schema:Person
97 sg:person.012436124105.42 schema:affiliation grid-institutes:grid.423485.c
98 schema:familyName Kuznetsov
99 schema:givenName A. N.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42
101 rdf:type schema:Person
102 sg:person.012671615173.91 schema:affiliation grid-institutes:grid.423485.c
103 schema:familyName Kazanin
104 schema:givenName M. M.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012671615173.91
106 rdf:type schema:Person
107 sg:person.013103115063.85 schema:affiliation grid-institutes:grid.5596.f
108 schema:familyName Adriaenssens
109 schema:givenName G. J.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013103115063.85
111 rdf:type schema:Person
112 sg:person.013415737035.88 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Kudoyarova
114 schema:givenName V. Kh.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013415737035.88
116 rdf:type schema:Person
117 grid-institutes:grid.423485.c schema:alternateName A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, .
118 schema:name A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia, .
119 rdf:type schema:Organization
120 grid-institutes:grid.5596.f schema:alternateName K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium, .
121 schema:name K.U. Leuven, Laboratorium voor Halfgeleiderfysica, B-3001, Heverlee, Belgium, .
122 rdf:type schema:Organization
 




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