Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1996

AUTHORS

I. N. Yassievich, O. B. Gusev, M. S. Bresler, W. Fuhs, A. N. Kuznetsov, V. F. Masterov, E. I. Terukov, B. P. Zakharchenya

ABSTRACT

Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain consistently the whole set of our experimental results.

PAGES

325

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-422-325

DOI

http://dx.doi.org/10.1557/proc-422-325

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067934929


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