A-Si:H Films Deposited by Dc-Masd Technique at High Substrate Temperature View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1996

AUTHORS

O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudojarova, M. M. Kazanin, A. Ikosarev

ABSTRACT

Dc-magnetron assisted silane decomposition technique has been tested for deposition of undoped a-Si:H at substrate temperature T s =300–400°C. In the optimized conditions device-quality a-Si: H films were deposited independently of T s . A low hydrogen content C H (up to 2 at.°) and microstructure variations are characteristic of the MASD films. More... »

PAGES

353

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-420-353

DOI

http://dx.doi.org/10.1557/proc-420-353

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067934741


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