Ontology type: schema:ScholarlyArticle
1995
AUTHORSN. A. Bert, V. V. Chaldyshev, N. N. Faleev, A. E. Kunitsyn, V. V. Tret'yakov, D. I. Lubyshev, V. V. Preobrazhenskii, B R. Semyagin
ABSTRACTWe have shown that two-dimensional layers of arsenic nano-clusters separated by cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low (200°C) temperature. Spatially ordered structures of As clusters have been obtained in the epitaxial LT GaAs films doped with Si donors, Be acceptors and undoped as well. More... »
PAGES135
http://scigraph.springernature.com/pub.10.1557/proc-417-135
DOIhttp://dx.doi.org/10.1557/proc-417-135
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1067934550
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[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/03",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Chemical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0306",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Chemistry (incl. Structural)",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia",
"id": "http://www.grid.ac/institutes/None",
"name": [
"Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia"
],
"type": "Organization"
},
"familyName": "Bert",
"givenName": "N. A.",
"id": "sg:person.010314101551.02",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010314101551.02"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia",
"id": "http://www.grid.ac/institutes/None",
"name": [
"Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia"
],
"type": "Organization"
},
"familyName": "Chaldyshev",
"givenName": "V. V.",
"id": "sg:person.010716755351.29",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia",
"id": "http://www.grid.ac/institutes/None",
"name": [
"Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia"
],
"type": "Organization"
},
"familyName": "Faleev",
"givenName": "N. N.",
"id": "sg:person.07414336143.91",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07414336143.91"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia",
"id": "http://www.grid.ac/institutes/None",
"name": [
"Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia"
],
"type": "Organization"
},
"familyName": "Kunitsyn",
"givenName": "A. E.",
"id": "sg:person.011601422063.09",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601422063.09"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia",
"id": "http://www.grid.ac/institutes/None",
"name": [
"Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia"
],
"type": "Organization"
},
"familyName": "Tret'yakov",
"givenName": "V. V.",
"id": "sg:person.016037435257.14",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics, Novosibirsk 630090, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"Institute of Semiconductor Physics, Novosibirsk 630090, Russia"
],
"type": "Organization"
},
"familyName": "Lubyshev",
"givenName": "D. I.",
"id": "sg:person.011357535721.27",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011357535721.27"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics, Novosibirsk 630090, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"Institute of Semiconductor Physics, Novosibirsk 630090, Russia"
],
"type": "Organization"
},
"familyName": "Preobrazhenskii",
"givenName": "V. V.",
"id": "sg:person.010664106542.73",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics, Novosibirsk 630090, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"Institute of Semiconductor Physics, Novosibirsk 630090, Russia"
],
"type": "Organization"
},
"familyName": "Semyagin",
"givenName": "B R.",
"id": "sg:person.011644303155.87",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
],
"type": "Person"
}
],
"datePublished": "1995",
"datePublishedReg": "1995-01-01",
"description": "Abstract We have shown that two-dimensional layers of arsenic nano-clusters separated by cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low (200\u00b0C) temperature. Spatially ordered structures of As clusters have been obtained in the epitaxial LT GaAs films doped with Si donors, Be acceptors and undoped as well.",
"genre": "article",
"id": "sg:pub.10.1557/proc-417-135",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1297379",
"issn": [
"0272-9172",
"2059-8521"
],
"name": "MRS Advances",
"publisher": "Springer Nature",
"type": "Periodical"
},
{
"type": "PublicationVolume",
"volumeNumber": "417"
}
],
"keywords": [
"GaAs films",
"molecular beam epitaxy",
"delta doping",
"beam epitaxy",
"Si donors",
"films",
"GaAs matrix",
"low temperature",
"two-dimensional layers",
"epitaxy",
"GaAs",
"spatial ordering",
"layer",
"indium",
"temperature",
"matrix",
"structure",
"ordering",
"Abstract",
"acceptor",
"clusters",
"donors"
],
"name": "Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs",
"pagination": "135",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1067934550"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1557/proc-417-135"
]
}
],
"sameAs": [
"https://doi.org/10.1557/proc-417-135",
"https://app.dimensions.ai/details/publication/pub.1067934550"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:20",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_286.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1557/proc-417-135"
}
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