Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1995

AUTHORS

N. A. Bert, V. V. Chaldyshev, N. N. Faleev, A. E. Kunitsyn, V. V. Tret'yakov, D. I. Lubyshev, V. V. Preobrazhenskii, B R. Semyagin

ABSTRACT

We have shown that two-dimensional layers of arsenic nano-clusters separated by cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low (200°C) temperature. Spatially ordered structures of As clusters have been obtained in the epitaxial LT GaAs films doped with Si donors, Be acceptors and undoped as well. More... »

PAGES

135

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-417-135

DOI

http://dx.doi.org/10.1557/proc-417-135

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067934550


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