Structural Defects in Laser Annealed Arsenic Implanted Silicon View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1990

AUTHORS

J. M. Tonnerre, M. Matsuura, G. S. Cargill, L. W. Hobbs

ABSTRACT

ABSTRACT Laser annealed arsenic implanted silicon specimens with doses ranging from 6×10 15 to 7×10 16 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (˜50Å diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000Å before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution. More... »

PAGES

505

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-209-505

DOI

http://dx.doi.org/10.1557/proc-209-505

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067917321


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598", 
          "id": "http://www.grid.ac/institutes/grid.481554.9", 
          "name": [
            "IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tonnerre", 
        "givenName": "J. M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598", 
          "id": "http://www.grid.ac/institutes/grid.481554.9", 
          "name": [
            "IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Matsuura", 
        "givenName": "M.", 
        "id": "sg:person.011270563455.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011270563455.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598", 
          "id": "http://www.grid.ac/institutes/grid.481554.9", 
          "name": [
            "IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cargill", 
        "givenName": "G. S.", 
        "id": "sg:person.0662167340.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0662167340.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139", 
          "id": "http://www.grid.ac/institutes/grid.116068.8", 
          "name": [
            "MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hobbs", 
        "givenName": "L. W.", 
        "type": "Person"
      }
    ], 
    "datePublished": "1990", 
    "datePublishedReg": "1990-01-01", 
    "description": "ABSTRACT  Laser annealed arsenic implanted silicon specimens with doses ranging from 6\u00d710 15 to 7\u00d710 16 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (\u02dc50\u00c5 diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000\u00c5 before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution. ", 
    "genre": "article", 
    "id": "sg:pub.10.1557/proc-209-505", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1297379", 
        "issn": [
          "2731-5894", 
          "2059-8521"
        ], 
        "name": "MRS Advances", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "209"
      }
    ], 
    "keywords": [
      "arsenic implanted silicon", 
      "implanted silicon", 
      "transmission electron microscopy", 
      "higher implant dose", 
      "laser power", 
      "implant dose", 
      "substitutional sites", 
      "experimental observations", 
      "structural defects", 
      "dislocation loops", 
      "electron microscopy", 
      "silicon", 
      "Si interstitials", 
      "kinds of specimen", 
      "laser", 
      "deeper regions", 
      "new features", 
      "Xray diffractometry", 
      "microscopy", 
      "interstitials", 
      "diffractometry", 
      "distribution", 
      "defects", 
      "region", 
      "simulations", 
      "power", 
      "loop", 
      "specimen", 
      "strains", 
      "features", 
      "Abstract", 
      "kind", 
      "cases", 
      "presence", 
      "negative strains", 
      "As distribution", 
      "addition", 
      "dose", 
      "observations", 
      "end", 
      "doses", 
      "sites", 
      "positive strains"
    ], 
    "name": "Structural Defects in Laser Annealed Arsenic Implanted Silicon", 
    "pagination": "505", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1067917321"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1557/proc-209-505"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1557/proc-209-505", 
      "https://app.dimensions.ai/details/publication/pub.1067917321"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-12-01T06:21", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221201/entities/gbq_results/article/article_258.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1557/proc-209-505"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1557/proc-209-505'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1557/proc-209-505'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1557/proc-209-505'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1557/proc-209-505'


 

This table displays all metadata directly associated to this object as RDF triples.

119 TRIPLES      20 PREDICATES      67 URIs      59 LITERALS      5 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1557/proc-209-505 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author Nec57e44189694a7bb9439451e6394d2a
4 schema:datePublished 1990
5 schema:datePublishedReg 1990-01-01
6 schema:description ABSTRACT Laser annealed arsenic implanted silicon specimens with doses ranging from 6×10 15 to 7×10 16 As/cm 2 have been investigated by transmission electron microscopy (TEM) and double crystal xray diffractometry (DCD). For the highest implant dose, laser powers ranging from 1.1 to 2.2 J/cm 2 have been used. Experimental observations show two new features for this kind of specimen. First, in some cases, TEM micrographs evidence small (˜50Å diameter) precipitate-like defects and/or dislocation loops confined within the heavily doped region. Second, in some cases, DCD shows a positive strain in addition to the negative strain attributed to 90% As in substitutional sites. X-ray rocking-curve simulations reveal that the negative strain drops to zero around 1000Å before the end of the As distribution. This might be related to the presence of Si interstitials in the deepest region of the As distribution.
7 schema:genre article
8 schema:isAccessibleForFree false
9 schema:isPartOf Nbef4d44e967844f89f065d319dfaa6aa
10 sg:journal.1297379
11 schema:keywords Abstract
12 As distribution
13 Si interstitials
14 Xray diffractometry
15 addition
16 arsenic implanted silicon
17 cases
18 deeper regions
19 defects
20 diffractometry
21 dislocation loops
22 distribution
23 dose
24 doses
25 electron microscopy
26 end
27 experimental observations
28 features
29 higher implant dose
30 implant dose
31 implanted silicon
32 interstitials
33 kind
34 kinds of specimen
35 laser
36 laser power
37 loop
38 microscopy
39 negative strains
40 new features
41 observations
42 positive strains
43 power
44 presence
45 region
46 silicon
47 simulations
48 sites
49 specimen
50 strains
51 structural defects
52 substitutional sites
53 transmission electron microscopy
54 schema:name Structural Defects in Laser Annealed Arsenic Implanted Silicon
55 schema:pagination 505
56 schema:productId N195286d587d74dbebce37127bc810dba
57 N3d5c911f545f46589212e8a5846ea569
58 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067917321
59 https://doi.org/10.1557/proc-209-505
60 schema:sdDatePublished 2022-12-01T06:21
61 schema:sdLicense https://scigraph.springernature.com/explorer/license/
62 schema:sdPublisher N45caf45fb74b451d901b54335d63c6ff
63 schema:url https://doi.org/10.1557/proc-209-505
64 sgo:license sg:explorer/license/
65 sgo:sdDataset articles
66 rdf:type schema:ScholarlyArticle
67 N181791c367134a098f434d683b0c728c rdf:first sg:person.0662167340.73
68 rdf:rest N4c95c68af30041d18d93906120a2142c
69 N195286d587d74dbebce37127bc810dba schema:name doi
70 schema:value 10.1557/proc-209-505
71 rdf:type schema:PropertyValue
72 N3d5c911f545f46589212e8a5846ea569 schema:name dimensions_id
73 schema:value pub.1067917321
74 rdf:type schema:PropertyValue
75 N45caf45fb74b451d901b54335d63c6ff schema:name Springer Nature - SN SciGraph project
76 rdf:type schema:Organization
77 N4af15e45485240769243b255478fb71b rdf:first sg:person.011270563455.71
78 rdf:rest N181791c367134a098f434d683b0c728c
79 N4c95c68af30041d18d93906120a2142c rdf:first N50ff28e9cd8b4fd583b59687130ffc1e
80 rdf:rest rdf:nil
81 N50ff28e9cd8b4fd583b59687130ffc1e schema:affiliation grid-institutes:grid.116068.8
82 schema:familyName Hobbs
83 schema:givenName L. W.
84 rdf:type schema:Person
85 N863307d9831b4821b312785295ac1575 schema:affiliation grid-institutes:grid.481554.9
86 schema:familyName Tonnerre
87 schema:givenName J. M.
88 rdf:type schema:Person
89 Nbef4d44e967844f89f065d319dfaa6aa schema:volumeNumber 209
90 rdf:type schema:PublicationVolume
91 Nec57e44189694a7bb9439451e6394d2a rdf:first N863307d9831b4821b312785295ac1575
92 rdf:rest N4af15e45485240769243b255478fb71b
93 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
94 schema:name Physical Sciences
95 rdf:type schema:DefinedTerm
96 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
97 schema:name Other Physical Sciences
98 rdf:type schema:DefinedTerm
99 sg:journal.1297379 schema:issn 2059-8521
100 2731-5894
101 schema:name MRS Advances
102 schema:publisher Springer Nature
103 rdf:type schema:Periodical
104 sg:person.011270563455.71 schema:affiliation grid-institutes:grid.481554.9
105 schema:familyName Matsuura
106 schema:givenName M.
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011270563455.71
108 rdf:type schema:Person
109 sg:person.0662167340.73 schema:affiliation grid-institutes:grid.481554.9
110 schema:familyName Cargill
111 schema:givenName G. S.
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0662167340.73
113 rdf:type schema:Person
114 grid-institutes:grid.116068.8 schema:alternateName MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
115 schema:name MIT, Dept. of Materials Science and Engineering, Cambridge, MA 02139
116 rdf:type schema:Organization
117 grid-institutes:grid.481554.9 schema:alternateName IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
118 schema:name IBM Research Division, T. J. Watson Research Center, Yorktown Ileights, NY 10598
119 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...