Submicron Conductor Array Fabricated from a Recrystallized Eutectic Thin Film View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1982

AUTHORS

H. E. Cline

ABSTRACT

ABSTRACT A submicron conductor array was fabricated without using lithography by selectively etching a recrystallized A1-A1 2 Cu eutectic alloy thin film. The 2 micron thick eutectic films were deposited on glass substrates and directionally solidified with both a quartz-iodine lamp and a scanning laser at rates between .0016 and .14 cm/sec. The resulting structure consisted of alternate parallel stripes of the two eutectic phases with a spacing between .5 and 4 microns that was controlled by the solidification rate. An array of submicron Al- rich conductors was fabricated by selectively etching away the Al 2 Cu phase. At solidification rates greater than .004 cm/sec using the lamp heater the solid-liquid interface became non-planar while with the laser the structure was well alligned at the highest rates used, .14 cm/sec. At the maximum theoretical solidification rate that produces a two phase aligned eutectic structure the width of the Al wires would be 100A. More... »

PAGES

727

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-13-727

DOI

http://dx.doi.org/10.1557/proc-13-727

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067911418


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301", 
          "id": "http://www.grid.ac/institutes/grid.418143.b", 
          "name": [
            "General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cline", 
        "givenName": "H. E.", 
        "id": "sg:person.01322643567.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01322643567.10"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1982", 
    "datePublishedReg": "1982-01-01", 
    "description": "ABSTRACT  A submicron conductor array was fabricated without using lithography by selectively etching a recrystallized A1-A1 2 Cu eutectic alloy thin film. The 2 micron thick eutectic films were deposited on glass substrates and directionally solidified with both a quartz-iodine lamp and a scanning laser at rates between .0016 and .14 cm/sec. The resulting structure consisted of alternate parallel stripes of the two eutectic phases with a spacing between .5 and 4 microns that was controlled by the solidification rate. An array of submicron Al- rich conductors was fabricated by selectively etching away the Al 2 Cu phase. At solidification rates greater than .004 cm/sec using the lamp heater the solid-liquid interface became non-planar while with the laser the structure was well alligned at the highest rates used, .14 cm/sec. At the maximum theoretical solidification rate that produces a two phase aligned eutectic structure the width of the Al wires would be 100A. ", 
    "genre": "article", 
    "id": "sg:pub.10.1557/proc-13-727", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1297379", 
        "issn": [
          "2731-5894", 
          "2059-8521"
        ], 
        "name": "MRS Advances", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "13"
      }
    ], 
    "keywords": [
      "solidification rate", 
      "thin films", 
      "alloy thin films", 
      "solid-liquid interface", 
      "eutectic phase", 
      "eutectic structure", 
      "eutectic films", 
      "lamp heater", 
      "glass substrates", 
      "Al wire", 
      "Cu phase", 
      "conductor array", 
      "films", 
      "parallel stripes", 
      "heater", 
      "Fabricated", 
      "laser", 
      "array", 
      "lithography", 
      "phase", 
      "quartz-iodine lamp", 
      "conductors", 
      "wire", 
      "structure", 
      "interface", 
      "spacing", 
      "substrate", 
      "microns", 
      "lamp", 
      "width", 
      "sec", 
      "rate", 
      "scanning laser", 
      "stripes", 
      "Abstract", 
      "high rate"
    ], 
    "name": "Submicron Conductor Array Fabricated from a Recrystallized Eutectic Thin Film", 
    "pagination": "727", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1067911418"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1557/proc-13-727"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1557/proc-13-727", 
      "https://app.dimensions.ai/details/publication/pub.1067911418"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-11-24T20:45", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221124/entities/gbq_results/article/article_173.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1557/proc-13-727"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

90 TRIPLES      20 PREDICATES      60 URIs      52 LITERALS      5 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1557/proc-13-727 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nf6c47a8c52b6470cbb6df4791702e832
4 schema:datePublished 1982
5 schema:datePublishedReg 1982-01-01
6 schema:description ABSTRACT A submicron conductor array was fabricated without using lithography by selectively etching a recrystallized A1-A1 2 Cu eutectic alloy thin film. The 2 micron thick eutectic films were deposited on glass substrates and directionally solidified with both a quartz-iodine lamp and a scanning laser at rates between .0016 and .14 cm/sec. The resulting structure consisted of alternate parallel stripes of the two eutectic phases with a spacing between .5 and 4 microns that was controlled by the solidification rate. An array of submicron Al- rich conductors was fabricated by selectively etching away the Al 2 Cu phase. At solidification rates greater than .004 cm/sec using the lamp heater the solid-liquid interface became non-planar while with the laser the structure was well alligned at the highest rates used, .14 cm/sec. At the maximum theoretical solidification rate that produces a two phase aligned eutectic structure the width of the Al wires would be 100A.
7 schema:genre article
8 schema:isAccessibleForFree false
9 schema:isPartOf Nde4091fe18f3463799ec64f62e6cf38a
10 sg:journal.1297379
11 schema:keywords Abstract
12 Al wire
13 Cu phase
14 Fabricated
15 alloy thin films
16 array
17 conductor array
18 conductors
19 eutectic films
20 eutectic phase
21 eutectic structure
22 films
23 glass substrates
24 heater
25 high rate
26 interface
27 lamp
28 lamp heater
29 laser
30 lithography
31 microns
32 parallel stripes
33 phase
34 quartz-iodine lamp
35 rate
36 scanning laser
37 sec
38 solid-liquid interface
39 solidification rate
40 spacing
41 stripes
42 structure
43 substrate
44 thin films
45 width
46 wire
47 schema:name Submicron Conductor Array Fabricated from a Recrystallized Eutectic Thin Film
48 schema:pagination 727
49 schema:productId N59ee0da1e2a144339ab0284e3ced507b
50 N600eb4e5ef8e44018aaf3eabd3c087ae
51 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067911418
52 https://doi.org/10.1557/proc-13-727
53 schema:sdDatePublished 2022-11-24T20:45
54 schema:sdLicense https://scigraph.springernature.com/explorer/license/
55 schema:sdPublisher Nb00feaa9eb424f82bb6a1bd0ced2b666
56 schema:url https://doi.org/10.1557/proc-13-727
57 sgo:license sg:explorer/license/
58 sgo:sdDataset articles
59 rdf:type schema:ScholarlyArticle
60 N59ee0da1e2a144339ab0284e3ced507b schema:name dimensions_id
61 schema:value pub.1067911418
62 rdf:type schema:PropertyValue
63 N600eb4e5ef8e44018aaf3eabd3c087ae schema:name doi
64 schema:value 10.1557/proc-13-727
65 rdf:type schema:PropertyValue
66 Nb00feaa9eb424f82bb6a1bd0ced2b666 schema:name Springer Nature - SN SciGraph project
67 rdf:type schema:Organization
68 Nde4091fe18f3463799ec64f62e6cf38a schema:volumeNumber 13
69 rdf:type schema:PublicationVolume
70 Nf6c47a8c52b6470cbb6df4791702e832 rdf:first sg:person.01322643567.10
71 rdf:rest rdf:nil
72 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
73 schema:name Engineering
74 rdf:type schema:DefinedTerm
75 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
76 schema:name Materials Engineering
77 rdf:type schema:DefinedTerm
78 sg:journal.1297379 schema:issn 2059-8521
79 2731-5894
80 schema:name MRS Advances
81 schema:publisher Springer Nature
82 rdf:type schema:Periodical
83 sg:person.01322643567.10 schema:affiliation grid-institutes:grid.418143.b
84 schema:familyName Cline
85 schema:givenName H. E.
86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01322643567.10
87 rdf:type schema:Person
88 grid-institutes:grid.418143.b schema:alternateName General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301
89 schema:name General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301
90 rdf:type schema:Organization
 




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