Fabrication and Current-Voltage Characteristics of Ni Spin Quantum Cross Devices with P3HT:PCBM Organic Materials View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2010

AUTHORS

Hideo Kaiju, Kenji Kondo, Nubla Basheer, Nobuyoshi Kawaguchi, Susanne White, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

ABSTRACT

We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage ( I-V ) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm × 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high on/off ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition. More... »

PAGES

1252-j02-08

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-1252-j02-08

DOI

http://dx.doi.org/10.1557/proc-1252-j02-08

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067910444


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