HfO2-based Thin Films Deposited by RF Magnetron Sputtering View Full Text


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Article Info

DATE

2009

AUTHORS

Larysa Khomenkova, Christian Dufour, Pierre-Eugène Coulon, Caroline Bonafos, Fabrice Gourbilleau

ABSTRACT

HfO 2 -based layers prepared by RF magnetron sputtering were studied by X-ray diffraction, infrared absorption spectroscopy and transmission electron microscopy techniques. The effect of the deposition parameters and post-deposition annealing treatment on the properties of the layers was investigated. The amorphous-crystalline transformation of pure HfO 2 layers is observed to be stimulated by annealing treatment at 800 ° C. It was found that the incorporation of silicon in HfO 2 matrix allows to prevent crystallization of the layers and to shift the crystallization temperature to values up to 900 °C. More... »

PAGES

1160-h05-08

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-1160-h05-08

DOI

http://dx.doi.org/10.1557/proc-1160-h05-08

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067908140


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