Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2008

AUTHORS

Celine Lecerf, Philippe Marie, Cedric Frilay, Julien Cardin, Xavier Portier

ABSTRACT

Photoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4 F 3/2  4 I 9/2 and 4 F 3/2  4 I 11/2 electronic transitions of Nd 3+ . The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency. More... »

PAGES

1111-d07-04

References to SciGraph publications

Journal

TITLE

MRS Advances

ISSUE

N/A

VOLUME

1111

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-1111-d07-04

DOI

http://dx.doi.org/10.1557/proc-1111-d07-04

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067907250


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