Near-field photoluminescence spectroscopy of InGaN quantum dots. View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-01

AUTHORS

A. M. Mintairov, J. L. Merz, D. S. Sizov, V. S. Sizov, V. V. Lundin, S. O. Usov, E. E. Zavarin, A. F. Tsatsul’nikov, Yu. G. Musikhin, A. S. Vlasov, N. N. Ledentsov

ABSTRACT

We used temperature dependent near-field magneto-photoluminescence spectroscopy to study the emission properties of blue-green InGaN quantum wells (QWs) with spatial resolution of ~100 nm. Spectral features related to single quantum dots (QDs) and In-rich islands of lateral size ~3 and ~30 nm, respectively, and larger QD ensembles have been identified. Individual QDs and In-rich islands appear to be located near dislocations and have activation energies below 30 meV. We found that at T>90 K emission from the InGaN QW occurs from “hot spots” of size ~100 nm and density ~5*108 cm−2 containing many deep QDs. The high emission intensity of these hot spots, occupying only 10% of the QW area, is attributed to the large oscillator strength of the optical transition in InGaN. More... »

PAGES

3206

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/proc-0892-ff32-06

DOI

http://dx.doi.org/10.1557/proc-0892-ff32-06

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067901671


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