Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy View Full Text


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Article Info

DATE

2015-03-13

AUTHORS

Sergei Rouvimov, Valentin N. Jmerik, Dmitrii V. Nechaev, Valentin V. Ratnikov, Alexey A. Toropov, Eugenii A. Shevchenko, Pavel N. Brunkov, Mikolai V. Rzheutski, Eugenii V. Lutsenko, Sergey V. Ivanov

ABSTRACT

ABSTRACT AlGaN-based SQW heterostructures grown by plasma-assisted molecular beam epitaxy on c-Al 2 O 3 substrates have been studied with high resolution transmission electron microscopy (HR TEM), photoluminescence spectroscopy and x-ray diffraction. The high-temperature (780°C) synthesis of the AlN buffer layer nucleated on c-Al 2 O 3 by a migration enhanced epitaxy and including several ultra-thin GaN interlayers grown under moderate N-rich conditions was shown to be the optimum approach for lowering the threading dislocations density down to 10 8 -10 9 cm -2 . HR TEM study has confirmed the fine structure of single quantum wells (SQW) formed by a sub-monolayer digital alloying technique and revealed different kinds of compositional inhomogeneities in the Al x Ga 1-x N barrier layers of the heterostructures, including the formation of Al-rich barriers induced by the temperature-modulated epitaxy and the spontaneous compositional disordering along the growth axis for x=0.6-0.7. The influence of these phenomena on the parameters of the mid-UV stimulated emission observed in the SQW structures has been studied as well. More... »

PAGES

mrsf14-1741-aa04-04

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URI

http://scigraph.springernature.com/pub.10.1557/opl.2015.247

DOI

http://dx.doi.org/10.1557/opl.2015.247

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