Light-Emitting and Structural Properties of Si-rich HfO2 Thin Films Fabricated by RF Magnetron Sputtering View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-11-19

AUTHORS

D. Khomenkov, Y.-T. An, X. Portier, C. Labbe, F. Gourbilleau, L. Khomenkova

ABSTRACT

ABSTRACT Structural, optical and luminescent properties of Si-rich HfO 2 films fabricated by RF magnetron sputtering were investigated versus annealing treatment. Pronounced phase separation process occurred at 950-1100°C and resulted in the formation of hafnia and silica phases, as well as pure silicon clusters. An intense light emission of annealed samples in visible spectral range was obtained under broad band excitation. It was ascribed to exciton recombination inside silicon clusters as well as host defects. To confirm the formation of Si clusters, the structures were co-doped with Er 3+ ions and effective light emission at 1.54µm was obtained under non-resonant excitation due to energy transfer from Si clusters towards Er 3+ ions. The interaction of Si clusters, host defects and Er 3+ ions under is discussed. More... »

PAGES

85-91

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/opl.2013.1169

DOI

http://dx.doi.org/10.1557/opl.2013.1169

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1115896900


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