Interrelation between Light Emitting and Structural Properties of Si Nanoclusters Embedded in SiO2 and Al2O3 Hosts View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-11-19

AUTHORS

L. Khomenkova, O. Kolomys, V. Strelchuk, A. Kuchuk, V. Kladko, M. Baran, J. Jedrzejewski, I. Balberg, P. Marie, F. Gourbilleau, N. Korsunska

ABSTRACT

ABSTRACT The present work deals with the comparative investigation of Si-ncs embedded in SiO 2 and Al 2 O 3 dielectrics grown by RF magnetron sputtering on fused quarts substrate. The effect of post-deposition processing on the evolution of microstructure of the films and their optic and luminescent properties was investigated. It was observed that photoluminescence (PL) spectra of Si x (SiO 2 ) 1-x films showed one PL band, which peak position shifts from 860 nm to 700 nm when the x decreases from 0.7 to 0.3. It is due to exciton recombination in Si-ncs. For Si x (Al 2 O 3 ) 1-x films, several PL bands peaked at about 570-600 nm and 700-750 nm and near-infrared tail or band peaked at about 800 nm were found. Two first PL bands were ascribed to different oxygen-deficient defects of oxide host, whereas near-infrared PL component is due to exciton recombination in Si-ncs. The comparison of both types of the samples showed that the main radiative recombination channel in Si x (SiO 2 ) 1-x films is exciton recombination in Si-ncs, while in Si x (Al 2 O 3 ) 1-x films the recombination via defects prevails due to higher amount of interface defects in the Si x (Al 2 O 3 ) 1-x caused by stresses. More... »

PAGES

75-80

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/opl.2013.1167

DOI

http://dx.doi.org/10.1557/opl.2013.1167

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1067973331


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