Memory effect in nanostructured Si-rich hafnia films View Full Text


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Article Info

DATE

2013-11-19

AUTHORS

L. Khomenkova, X. Portier, F. Gourbilleau, A.Slaoui

ABSTRACT

ABSTRACT Microstructral and charge-trap properties of single Hf-silicate dielectric films are presented versus annealing treatment. The as-grown films were found to be homogeneous and amorphous. It is shown that annealing treatment results in the formation of alternated Hf-rich and Si-rich layers. The mechanism responsible for this phenomenon is found to be surface directed spinodal decomposition. The increase of annealing temperature up to 1000-1100°C resulted in the crystallization of Hf-rich phase. The stability of its tetragonal phase caused an enhancement of film permittivity was observed. The evolution of charge trapping properties of the films results in the memory effect which nature was discussed. More... »

PAGES

69-74

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/opl.2013.1166

DOI

http://dx.doi.org/10.1557/opl.2013.1166

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1115914639


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