Emitting modification in Si-rich-SiN x films versus silicon nitride compositions View Full Text


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Article Info

DATE

2017-06-01

AUTHORS

T. Torchynska, G. Polupan, L. Khomenkova, A. Slaoui

ABSTRACT

SiN x films were grown by plasma-enhanced chemical vapor deposition on Si substrates with the composition controlled by the flow ratio R: ammonia to silane in the range R = 0.45–1.0. Then SiN x films were annealed at 1100 °C for 30 min to form Si-quantum dots (QDs). Fourier transform infrared spectroscopy study permits estimating SiN x compositions. Photoluminescence (PL) spectra of SiN x films included bands peaked at: 2.87–2.99, 2.42–2.54, 2.10–2.25, and 1.47–1.90 eV. Former three PL bands are attributed to emission via defects in SiN x films. Fourth PL band is assigned to exciton emission in Si QDs, detected by transmission electron microscopy study in films grown at R ≤ 0.67. The nature of non-radiative defects in SiN x films is discussed as well. More... »

PAGES

280-285

References to SciGraph publications

  • 2012-02-14. SiOx/SiNy multilayers for photovoltaic and photonic applications in NANOSCALE RESEARCH LETTERS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1557/mrc.2017.39

    DOI

    http://dx.doi.org/10.1557/mrc.2017.39

    DIMENSIONS

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