Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques View Full Text


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Article Info

DATE

2015-08-13

AUTHORS

Valentin N. Jmerik, Dmitrii V. Nechaev, Sergey Rouvimov, Valentin V. Ratnikov, Peter S. Kop'ev, Mikolai V. Rzheutski, Eugenii V. Lutsenko, Gennadii P. Yablonskii, Maher Aljohenii, Abdulaziz Aljerwii, Ahmed Alyamani, Sergey V. Ivanov

ABSTRACT

AlGaN-based quantum well (QW) heterostructures grown by plasma-assisted molecular beam epitaxy on c -Al 2 O 3 substrates have been studied. The high-temperature (785 °C) synthesis of AlN buffer layer nucleated by a migration-enhanced epitaxy and including several ultrathin GaN interlayers was the optimum approach for lowering the threading dislocations density down to 10 8 –10 9 cm −2 . High-angle annular dark-field scanning transmission electron microscopy (HAADF STEM) has revealed the step-like roughness of the AlN/Al 2 O 3 interface. Also, the formation of Al-rich barriers induced by temperature-modulated epitaxy and the spontaneous compositional disordering have been found in the Al x Ga 1− x N ( x > 0.6) barrier layers. The origin of these phenomena and their influence on parameters of the mid-UV stimulated emission observed in the QW heterostructures were discussed. The fine structure of the QWs formed by a submonolayer digital alloying technique has been displayed by HAADF STEM, and optical properties of the QW structures were studied by temperature- and time-dependent photoluminescence spectroscopy. More... »

PAGES

2871-2880

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1557/jmr.2015.220

DOI

http://dx.doi.org/10.1557/jmr.2015.220

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017435460


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