Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1994-04

AUTHORS

F. R. Chien, S. R. Nutt, W. S. Yoo, T. Kimoto, H. Matsunami

ABSTRACT

Epitaxial β -SiC (3C) films were grown on (0001) 6H-SiC and 15R-SiC substrates by chemical vapor deposition (CVD). TEM characterization revealed that films on both substrates exhibited large areas of atomically flat, coherent interfaces. However, when 3C-SiC films were grown on 6H substrates, double position boundaries (DPB's) were frequently observed, and islands of 6H were occasionally embedded in the predominantly 3C film. In contrast, films of 3C-SiC grown on 15R substrates exhibited relatively few DPB's and only occasional islands of 15R. A model of interlay er interactions in SiC was applied to predict the atomic structures at both 3C/6H and 3C/s15R interfaces, and these predictions were consistent with experimental observations of the interfaces by TEM. The observed interface structures and defect distributions were attributed to a microscopic kinetic mechanism of terrace growth. Consideration of step energies and growth kinetics led to the prediction that DPB's can be avoided by growing 3C-SiC films on 15R-SiC substrates. More... »

PAGES

940-954

References to SciGraph publications

  • 1989. VPE Growth of SiC on Step-Controlled Substrates in AMORPHOUS AND CRYSTALLINE SILICON CARBIDE AND RELATED MATERIALS
  • 1992. Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substrates in AMORPHOUS AND CRYSTALLINE SILICON CARBIDE IV
  • 1989. Recent Developments in SiC (USA) in AMORPHOUS AND CRYSTALLINE SILICON CARBIDE AND RELATED MATERIALS
  • 1989. Mechanisms of Epitaxial Growth of Polar Semiconductors on (001) Silicon in POLYCRYSTALLINE SEMICONDUCTORS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1557/jmr.1994.0940

    DOI

    http://dx.doi.org/10.1557/jmr.1994.0940

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1016825731


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    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Engineering", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Materials Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Division of Engineering, Brown University, Providence, Rhode Island 02912", 
              "id": "http://www.grid.ac/institutes/grid.40263.33", 
              "name": [
                "Division of Engineering, Brown University, Providence, Rhode Island 02912"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Chien", 
            "givenName": "F. R.", 
            "id": "sg:person.013156506741.42", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013156506741.42"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Division of Engineering, Brown University, Providence, Rhode Island 02912", 
              "id": "http://www.grid.ac/institutes/grid.40263.33", 
              "name": [
                "Division of Engineering, Brown University, Providence, Rhode Island 02912"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Nutt", 
            "givenName": "S. R.", 
            "id": "sg:person.01325700464.00", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01325700464.00"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Advanced Technology Materials, Inc., Danbury, Connecticut 06810", 
              "id": "http://www.grid.ac/institutes/grid.455115.1", 
              "name": [
                "Advanced Technology Materials, Inc., Danbury, Connecticut 06810"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Yoo", 
            "givenName": "W. S.", 
            "id": "sg:person.010421154620.89", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010421154620.89"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Department of Electrical Engineering, Kyoto University, Kyoto 606\u201301, Japan", 
              "id": "http://www.grid.ac/institutes/grid.258799.8", 
              "name": [
                "Department of Electrical Engineering, Kyoto University, Kyoto 606\u201301, Japan"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kimoto", 
            "givenName": "T.", 
            "id": "sg:person.013440527315.40", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013440527315.40"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Department of Electrical Engineering, Kyoto University, Kyoto 606\u201301, Japan", 
              "id": "http://www.grid.ac/institutes/grid.258799.8", 
              "name": [
                "Department of Electrical Engineering, Kyoto University, Kyoto 606\u201301, Japan"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Matsunami", 
            "givenName": "H.", 
            "id": "sg:person.07650253761.30", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07650253761.30"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1007/978-3-642-93406-3_1", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1089827456", 
              "https://doi.org/10.1007/978-3-642-93406-3_1"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/978-3-642-93413-1_28", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1047809739", 
              "https://doi.org/10.1007/978-3-642-93413-1_28"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/978-3-642-93406-3_3", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1089827478", 
              "https://doi.org/10.1007/978-3-642-93406-3_3"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/978-3-642-84804-9_8", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1020880649", 
              "https://doi.org/10.1007/978-3-642-84804-9_8"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "1994-04", 
        "datePublishedReg": "1994-04-01", 
        "description": " Epitaxial \u03b2 -SiC (3C) films were grown on (0001) 6H-SiC and 15R-SiC substrates by chemical vapor deposition (CVD). TEM characterization revealed that films on both substrates exhibited large areas of atomically flat, coherent interfaces. However, when 3C-SiC films were grown on 6H substrates, double position boundaries (DPB's) were frequently observed, and islands of 6H were occasionally embedded in the predominantly 3C film. In contrast, films of 3C-SiC grown on 15R substrates exhibited relatively few DPB's and only occasional islands of 15R. A model of interlay er interactions in SiC was applied to predict the atomic structures at both 3C/6H and 3C/s15R interfaces, and these predictions were consistent with experimental observations of the interfaces by TEM. The observed interface structures and defect distributions were attributed to a microscopic kinetic mechanism of terrace growth. Consideration of step energies and growth kinetics led to the prediction that DPB's can be avoided by growing 3C-SiC films on 15R-SiC substrates. ", 
        "genre": "article", 
        "id": "sg:pub.10.1557/jmr.1994.0940", 
        "inLanguage": "en", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1357547", 
            "issn": [
              "0884-2914", 
              "2044-5326"
            ], 
            "name": "Journal of Materials Research", 
            "publisher": "Springer Nature", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "4", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "9"
          }
        ], 
        "keywords": [
          "chemical vapor deposition", 
          "double position boundaries", 
          "observed interface structures", 
          "microscopic kinetic mechanism", 
          "atomic structure", 
          "SiC films", 
          "vapor deposition", 
          "SiC substrate", 
          "terrace growth", 
          "interface structure", 
          "experimental observations", 
          "defect distribution", 
          "films", 
          "step energy", 
          "coherent interface", 
          "TEM characterization", 
          "substrate", 
          "occasional islands", 
          "energy", 
          "growth kinetics", 
          "interface", 
          "large areas", 
          "ER interaction", 
          "deposition", 
          "structure", 
          "SiC", 
          "prediction", 
          "interaction", 
          "TEM", 
          "distribution", 
          "boundaries", 
          "characterization", 
          "kinetic mechanism", 
          "DPB", 
          "islands", 
          "kinetics", 
          "mechanism", 
          "growth", 
          "contrast", 
          "model", 
          "consideration", 
          "development", 
          "area", 
          "observations", 
          "position boundaries", 
          "islands of 6H", 
          "only occasional islands", 
          "interlay er interactions", 
          "s15R interfaces", 
          "polytype development"
        ], 
        "name": "Terrace growth and polytype development in epitaxial \u03b2-SiC films on \u03b1-SiC (6H and 15R) substrates", 
        "pagination": "940-954", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1016825731"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1557/jmr.1994.0940"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1557/jmr.1994.0940", 
          "https://app.dimensions.ai/details/publication/pub.1016825731"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2022-01-01T18:07", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_261.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1557/jmr.1994.0940"
      }
    ]
     

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    This table displays all metadata directly associated to this object as RDF triples.

    158 TRIPLES      22 PREDICATES      80 URIs      68 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1557/jmr.1994.0940 schema:about anzsrc-for:09
    2 anzsrc-for:0912
    3 schema:author N9ae4cae51d944b9399aab32c150dae27
    4 schema:citation sg:pub.10.1007/978-3-642-84804-9_8
    5 sg:pub.10.1007/978-3-642-93406-3_1
    6 sg:pub.10.1007/978-3-642-93406-3_3
    7 sg:pub.10.1007/978-3-642-93413-1_28
    8 schema:datePublished 1994-04
    9 schema:datePublishedReg 1994-04-01
    10 schema:description Epitaxial β -SiC (3C) films were grown on (0001) 6H-SiC and 15R-SiC substrates by chemical vapor deposition (CVD). TEM characterization revealed that films on both substrates exhibited large areas of atomically flat, coherent interfaces. However, when 3C-SiC films were grown on 6H substrates, double position boundaries (DPB's) were frequently observed, and islands of 6H were occasionally embedded in the predominantly 3C film. In contrast, films of 3C-SiC grown on 15R substrates exhibited relatively few DPB's and only occasional islands of 15R. A model of interlay er interactions in SiC was applied to predict the atomic structures at both 3C/6H and 3C/s15R interfaces, and these predictions were consistent with experimental observations of the interfaces by TEM. The observed interface structures and defect distributions were attributed to a microscopic kinetic mechanism of terrace growth. Consideration of step energies and growth kinetics led to the prediction that DPB's can be avoided by growing 3C-SiC films on 15R-SiC substrates.
    11 schema:genre article
    12 schema:inLanguage en
    13 schema:isAccessibleForFree false
    14 schema:isPartOf N3f3c094f620141e0afab1c96103de004
    15 N69f9232e9e45400587aa9d6684df922f
    16 sg:journal.1357547
    17 schema:keywords DPB
    18 ER interaction
    19 SiC
    20 SiC films
    21 SiC substrate
    22 TEM
    23 TEM characterization
    24 area
    25 atomic structure
    26 boundaries
    27 characterization
    28 chemical vapor deposition
    29 coherent interface
    30 consideration
    31 contrast
    32 defect distribution
    33 deposition
    34 development
    35 distribution
    36 double position boundaries
    37 energy
    38 experimental observations
    39 films
    40 growth
    41 growth kinetics
    42 interaction
    43 interface
    44 interface structure
    45 interlay er interactions
    46 islands
    47 islands of 6H
    48 kinetic mechanism
    49 kinetics
    50 large areas
    51 mechanism
    52 microscopic kinetic mechanism
    53 model
    54 observations
    55 observed interface structures
    56 occasional islands
    57 only occasional islands
    58 polytype development
    59 position boundaries
    60 prediction
    61 s15R interfaces
    62 step energy
    63 structure
    64 substrate
    65 terrace growth
    66 vapor deposition
    67 schema:name Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates
    68 schema:pagination 940-954
    69 schema:productId Nc228c88a58714159896cd8d1658f2ebb
    70 Ndc68e101e13b4a228e06fd16411d2aa2
    71 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016825731
    72 https://doi.org/10.1557/jmr.1994.0940
    73 schema:sdDatePublished 2022-01-01T18:07
    74 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    75 schema:sdPublisher Nb9bdd855c6b84ff8b6deb8ddd0fb86e5
    76 schema:url https://doi.org/10.1557/jmr.1994.0940
    77 sgo:license sg:explorer/license/
    78 sgo:sdDataset articles
    79 rdf:type schema:ScholarlyArticle
    80 N0d84e60862a24dfca32e3732ff3f60ca rdf:first sg:person.07650253761.30
    81 rdf:rest rdf:nil
    82 N3f3c094f620141e0afab1c96103de004 schema:issueNumber 4
    83 rdf:type schema:PublicationIssue
    84 N63a1799ab38e4d62bd988846bbffa37f rdf:first sg:person.010421154620.89
    85 rdf:rest Ndad2c8e371e04cae84772fd360eb2750
    86 N69f9232e9e45400587aa9d6684df922f schema:volumeNumber 9
    87 rdf:type schema:PublicationVolume
    88 N69fcf5b4b64e43a483461daa676120a7 rdf:first sg:person.01325700464.00
    89 rdf:rest N63a1799ab38e4d62bd988846bbffa37f
    90 N9ae4cae51d944b9399aab32c150dae27 rdf:first sg:person.013156506741.42
    91 rdf:rest N69fcf5b4b64e43a483461daa676120a7
    92 Nb9bdd855c6b84ff8b6deb8ddd0fb86e5 schema:name Springer Nature - SN SciGraph project
    93 rdf:type schema:Organization
    94 Nc228c88a58714159896cd8d1658f2ebb schema:name doi
    95 schema:value 10.1557/jmr.1994.0940
    96 rdf:type schema:PropertyValue
    97 Ndad2c8e371e04cae84772fd360eb2750 rdf:first sg:person.013440527315.40
    98 rdf:rest N0d84e60862a24dfca32e3732ff3f60ca
    99 Ndc68e101e13b4a228e06fd16411d2aa2 schema:name dimensions_id
    100 schema:value pub.1016825731
    101 rdf:type schema:PropertyValue
    102 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
    103 schema:name Engineering
    104 rdf:type schema:DefinedTerm
    105 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
    106 schema:name Materials Engineering
    107 rdf:type schema:DefinedTerm
    108 sg:journal.1357547 schema:issn 0884-2914
    109 2044-5326
    110 schema:name Journal of Materials Research
    111 schema:publisher Springer Nature
    112 rdf:type schema:Periodical
    113 sg:person.010421154620.89 schema:affiliation grid-institutes:grid.455115.1
    114 schema:familyName Yoo
    115 schema:givenName W. S.
    116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010421154620.89
    117 rdf:type schema:Person
    118 sg:person.013156506741.42 schema:affiliation grid-institutes:grid.40263.33
    119 schema:familyName Chien
    120 schema:givenName F. R.
    121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013156506741.42
    122 rdf:type schema:Person
    123 sg:person.01325700464.00 schema:affiliation grid-institutes:grid.40263.33
    124 schema:familyName Nutt
    125 schema:givenName S. R.
    126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01325700464.00
    127 rdf:type schema:Person
    128 sg:person.013440527315.40 schema:affiliation grid-institutes:grid.258799.8
    129 schema:familyName Kimoto
    130 schema:givenName T.
    131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013440527315.40
    132 rdf:type schema:Person
    133 sg:person.07650253761.30 schema:affiliation grid-institutes:grid.258799.8
    134 schema:familyName Matsunami
    135 schema:givenName H.
    136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07650253761.30
    137 rdf:type schema:Person
    138 sg:pub.10.1007/978-3-642-84804-9_8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020880649
    139 https://doi.org/10.1007/978-3-642-84804-9_8
    140 rdf:type schema:CreativeWork
    141 sg:pub.10.1007/978-3-642-93406-3_1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1089827456
    142 https://doi.org/10.1007/978-3-642-93406-3_1
    143 rdf:type schema:CreativeWork
    144 sg:pub.10.1007/978-3-642-93406-3_3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1089827478
    145 https://doi.org/10.1007/978-3-642-93406-3_3
    146 rdf:type schema:CreativeWork
    147 sg:pub.10.1007/978-3-642-93413-1_28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047809739
    148 https://doi.org/10.1007/978-3-642-93413-1_28
    149 rdf:type schema:CreativeWork
    150 grid-institutes:grid.258799.8 schema:alternateName Department of Electrical Engineering, Kyoto University, Kyoto 606–01, Japan
    151 schema:name Department of Electrical Engineering, Kyoto University, Kyoto 606–01, Japan
    152 rdf:type schema:Organization
    153 grid-institutes:grid.40263.33 schema:alternateName Division of Engineering, Brown University, Providence, Rhode Island 02912
    154 schema:name Division of Engineering, Brown University, Providence, Rhode Island 02912
    155 rdf:type schema:Organization
    156 grid-institutes:grid.455115.1 schema:alternateName Advanced Technology Materials, Inc., Danbury, Connecticut 06810
    157 schema:name Advanced Technology Materials, Inc., Danbury, Connecticut 06810
    158 rdf:type schema:Organization
     




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