Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range View Full Text


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Article Info

DATE

2017-12

AUTHORS

Jan Chochol, Kamil Postava, Michael Čada, Mathias Vanwolleghem, Martin Mičica, Lukáš Halagačka, Jean-François Lampin, Jaromír Pištora

ABSTRACT

In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field. More... »

PAGES

13

References to SciGraph publications

  • 1983-11. The far infrared optical properties of InP at 6 and 300 K in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 2012-03. A Review on Thin-film Sensing with Terahertz Waves in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 2013-01. THz Wave Modulators: A Brief Review on Different Modulation Techniques in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 2016-06. Advances in terahertz communications accelerated by photonics in NATURE PHOTONICS
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1186/s41476-017-0044-x

    DOI

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    DIMENSIONS

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    36 schema:description In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.
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