Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-12

AUTHORS

Eunah Ko, Jaemin Shin, Changhwan Shin

ABSTRACT

Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance FET), in which a threshold selector is added to an electrode (e.g., source or drain) of conventional field effect transistor. Although the concept of the aforementioned two devices was presented more or less recently, numerous studies have been published. In this review paper, by reviewing the published studies over the last decade, we shall de-brief and discuss the history and the future perspectives of NCFET/phase FET, respectively. The background, experimental investigation, and future direction for developing the aforementioned two representative steep switching devices (i.e., NCFET and phase FET/negative resistance FET) are to be discussed in detail. More... »

PAGES

2

Journal

TITLE

Nano Convergence

ISSUE

1

VOLUME

5

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/s40580-018-0135-4

DOI

http://dx.doi.org/10.1186/s40580-018-0135-4

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1100514523

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/29399434


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