Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2018-12

AUTHORS

Orazio Muscato, Tina Castiglione, Vincenza Di Stefano, Armando Coco

ABSTRACT

Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger–Poisson coupled system. The electron transport along the free direction can be tackled using a hydrodynamic model, formulated by taking the moments of the multisubband Boltzmann equation. We shall introduce an extended hydrodynamic model where closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle of Extended Thermodynamics, and in which the main scattering mechanisms such as those with phonons and surface roughness have been considered. By using this model, the low-field mobility of a Gate-All-Around SiNW transistor has been evaluated. More... »

PAGES

14

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/s13362-018-0056-1

DOI

http://dx.doi.org/10.1186/s13362-018-0056-1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110465241


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