RTN and Annealing Related to Stress and Temperature in FIND RRAM Array View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King

ABSTRACT

In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated. More... »

PAGES

12

Journal

TITLE

Nanoscale Research Letters

ISSUE

1

VOLUME

14

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/s11671-018-2846-1

DOI

http://dx.doi.org/10.1186/s11671-018-2846-1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1111268135

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30623262


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chen", 
        "givenName": "Chih Yuan", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lin", 
        "givenName": "Chrong Jung", 
        "id": "sg:person.011321735670.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011321735670.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "King", 
        "givenName": "Ya-Chin", 
        "id": "sg:person.012465176243.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012465176243.66"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1063/1.1150519", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057679080"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4927279", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058094278"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-12", 
    "datePublishedReg": "2019-12-01", 
    "description": "In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1186/s11671-018-2846-1", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1037280", 
        "issn": [
          "1931-7573", 
          "1556-276X"
        ], 
        "name": "Nanoscale Research Letters", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "14"
      }
    ], 
    "name": "RTN and Annealing Related to Stress and Temperature in FIND RRAM Array", 
    "pagination": "12", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "d8758955e199737ade3d9d199c1fe8833b3bbbab3ee57aaafc28153423993567"
        ]
      }, 
      {
        "name": "pubmed_id", 
        "type": "PropertyValue", 
        "value": [
          "30623262"
        ]
      }, 
      {
        "name": "nlm_unique_id", 
        "type": "PropertyValue", 
        "value": [
          "101279750"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1186/s11671-018-2846-1"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1111268135"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1186/s11671-018-2846-1", 
      "https://app.dimensions.ai/details/publication/pub.1111268135"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T08:57", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000325_0000000325/records_100812_00000000.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1186%2Fs11671-018-2846-1"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

88 TRIPLES      21 PREDICATES      31 URIs      21 LITERALS      9 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1186/s11671-018-2846-1 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Naf519104df2344479d067df0a2e4fc88
4 schema:citation https://doi.org/10.1063/1.1150519
5 https://doi.org/10.1063/1.4927279
6 schema:datePublished 2019-12
7 schema:datePublishedReg 2019-12-01
8 schema:description In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated.
9 schema:genre research_article
10 schema:inLanguage en
11 schema:isAccessibleForFree true
12 schema:isPartOf N54f5a67c4cf8413baf01f3330bbb89bb
13 N7087c667fe064488b3393e47b2abae7b
14 sg:journal.1037280
15 schema:name RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
16 schema:pagination 12
17 schema:productId N57b4287198c74d3fb804a625b6b7d686
18 N781cc7f0851649848633ad92f8bba1aa
19 N921f86ed0c334b1fa2d6e882b7b16aa1
20 N928844f833cf4048b855d1b1d2df13cf
21 Nb76fcc794cc743e8924011edfa44e12b
22 schema:sameAs https://app.dimensions.ai/details/publication/pub.1111268135
23 https://doi.org/10.1186/s11671-018-2846-1
24 schema:sdDatePublished 2019-04-11T08:57
25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
26 schema:sdPublisher N17f9d8c0cb0e487d93a3bced7ee98b3d
27 schema:url https://link.springer.com/10.1186%2Fs11671-018-2846-1
28 sgo:license sg:explorer/license/
29 sgo:sdDataset articles
30 rdf:type schema:ScholarlyArticle
31 N17f9d8c0cb0e487d93a3bced7ee98b3d schema:name Springer Nature - SN SciGraph project
32 rdf:type schema:Organization
33 N54f5a67c4cf8413baf01f3330bbb89bb schema:volumeNumber 14
34 rdf:type schema:PublicationVolume
35 N57b4287198c74d3fb804a625b6b7d686 schema:name nlm_unique_id
36 schema:value 101279750
37 rdf:type schema:PropertyValue
38 N6de097b9a1b24ea1988d96f3a8c7c1c9 rdf:first sg:person.012465176243.66
39 rdf:rest rdf:nil
40 N7087c667fe064488b3393e47b2abae7b schema:issueNumber 1
41 rdf:type schema:PublicationIssue
42 N781cc7f0851649848633ad92f8bba1aa schema:name pubmed_id
43 schema:value 30623262
44 rdf:type schema:PropertyValue
45 N921f86ed0c334b1fa2d6e882b7b16aa1 schema:name dimensions_id
46 schema:value pub.1111268135
47 rdf:type schema:PropertyValue
48 N928844f833cf4048b855d1b1d2df13cf schema:name readcube_id
49 schema:value d8758955e199737ade3d9d199c1fe8833b3bbbab3ee57aaafc28153423993567
50 rdf:type schema:PropertyValue
51 Naf519104df2344479d067df0a2e4fc88 rdf:first Nd65b017905df4797a17bb718c8046d35
52 rdf:rest Ne6ee397caf1948179f536b7e288d185b
53 Nb76fcc794cc743e8924011edfa44e12b schema:name doi
54 schema:value 10.1186/s11671-018-2846-1
55 rdf:type schema:PropertyValue
56 Nd65b017905df4797a17bb718c8046d35 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
57 schema:familyName Chen
58 schema:givenName Chih Yuan
59 rdf:type schema:Person
60 Ne6ee397caf1948179f536b7e288d185b rdf:first sg:person.011321735670.02
61 rdf:rest N6de097b9a1b24ea1988d96f3a8c7c1c9
62 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
63 schema:name Engineering
64 rdf:type schema:DefinedTerm
65 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
66 schema:name Materials Engineering
67 rdf:type schema:DefinedTerm
68 sg:journal.1037280 schema:issn 1556-276X
69 1931-7573
70 schema:name Nanoscale Research Letters
71 rdf:type schema:Periodical
72 sg:person.011321735670.02 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
73 schema:familyName Lin
74 schema:givenName Chrong Jung
75 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011321735670.02
76 rdf:type schema:Person
77 sg:person.012465176243.66 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
78 schema:familyName King
79 schema:givenName Ya-Chin
80 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012465176243.66
81 rdf:type schema:Person
82 https://doi.org/10.1063/1.1150519 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057679080
83 rdf:type schema:CreativeWork
84 https://doi.org/10.1063/1.4927279 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058094278
85 rdf:type schema:CreativeWork
86 https://www.grid.ac/institutes/grid.38348.34 schema:alternateName National Tsing Hua University
87 schema:name Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan
88 rdf:type schema:Organization
 




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