RTN and Annealing Related to Stress and Temperature in FIND RRAM Array View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2019-12

AUTHORS

Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King

ABSTRACT

In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated. More... »

PAGES

12

Journal

TITLE

Nanoscale Research Letters

ISSUE

1

VOLUME

14

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/s11671-018-2846-1

DOI

http://dx.doi.org/10.1186/s11671-018-2846-1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1111268135

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/30623262


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