Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy View Full Text


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Article Info

DATE

2018-05-08

AUTHORS

Oleksandr M. Slobodian, Peter M. Lytvyn, Andrii S. Nikolenko, Victor M. Naseka, Oleg Yu. Khyzhun, Andrey V. Vasin, Stanislav V. Sevostianov, Alexei N. Nazarov

ABSTRACT

Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO. More... »

PAGES

139

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/s11671-018-2536-z

DOI

http://dx.doi.org/10.1186/s11671-018-2536-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1103880038

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/29740776


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "National Technical University of Ukraine \u201cIgor Sikorsky KPI\u201d, 37, Prosp.Peremohy, Kyiv, 03056 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.440544.5", 
          "name": [
            "National Technical University of Ukraine \u201cIgor Sikorsky KPI\u201d, 37, Prosp.Peremohy, Kyiv, 03056 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Slobodian", 
        "givenName": "Oleksandr M.", 
        "id": "sg:person.015301333141.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015301333141.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lytvyn", 
        "givenName": "Peter M.", 
        "id": "sg:person.010311546360.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010311546360.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikolenko", 
        "givenName": "Andrii S.", 
        "id": "sg:person.01262231522.35", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01262231522.35"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Naseka", 
        "givenName": "Victor M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Frantsevych Institute for Problems of Materials Science NAS of Ukraine, 3 Krzhizhanovsky St., Kyiv, 03680 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.425103.1", 
          "name": [
            "Frantsevych Institute for Problems of Materials Science NAS of Ukraine, 3 Krzhizhanovsky St., Kyiv, 03680 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Khyzhun", 
        "givenName": "Oleg Yu.", 
        "id": "sg:person.015724432431.62", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015724432431.62"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "National Technical University of Ukraine \u201cIgor Sikorsky KPI\u201d, 37, Prosp.Peremohy, Kyiv, 03056 Ukraine", 
            "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasin", 
        "givenName": "Andrey V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Chuiko Institute of Surface Chemistry NAS of Ukraine, 17 Generala Naumova St, Kyiv, 03164 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.464622.0", 
          "name": [
            "Chuiko Institute of Surface Chemistry NAS of Ukraine, 17 Generala Naumova St, Kyiv, 03164 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sevostianov", 
        "givenName": "Stanislav V.", 
        "id": "sg:person.013245164063.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245164063.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "National Technical University of Ukraine \u201cIgor Sikorsky KPI\u201d, 37, Prosp.Peremohy, Kyiv, 03056 Ukraine", 
            "V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nazarov", 
        "givenName": "Alexei N.", 
        "id": "sg:person.014725015445.98", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014725015445.98"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/nchem.907", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017237473", 
          "https://doi.org/10.1038/nchem.907"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nchem.1820", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039552170", 
          "https://doi.org/10.1038/nchem.1820"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s40820-016-0117-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044787155", 
          "https://doi.org/10.1007/s40820-016-0117-1"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/ncomms5376", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041489318", 
          "https://doi.org/10.1038/ncomms5376"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nchem.1010", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038598812", 
          "https://doi.org/10.1038/nchem.1010"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2008.199", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040606030", 
          "https://doi.org/10.1038/nnano.2008.199"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf03353652", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1029436366", 
          "https://doi.org/10.1007/bf03353652"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-05-08", 
    "datePublishedReg": "2018-05-08", 
    "description": "Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250\u00a0\u00b0C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65\u00a0eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.", 
    "genre": "article", 
    "id": "sg:pub.10.1186/s11671-018-2536-z", 
    "inLanguage": "en", 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1037280", 
        "issn": [
          "1931-7573", 
          "1556-276X"
        ], 
        "name": "Nanoscale Research Letters", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "13"
      }
    ], 
    "keywords": [
      "atomic force microscopy", 
      "Kelvin probe force microscopy", 
      "force microscopy", 
      "graphene oxide films", 
      "orders of magnitude", 
      "drop-casting method", 
      "work function", 
      "four-point probe method", 
      "ray photoelectron spectroscopy", 
      "low work function", 
      "Scanning Kelvin Probe Force Microscopy", 
      "graphene oxide", 
      "GO films", 
      "GO flakes", 
      "GO planes", 
      "low-temperature annealing", 
      "Raman spectroscopy", 
      "photoelectron spectroscopy", 
      "probe method", 
      "oxide films", 
      "carbon planes", 
      "activation energy", 
      "electrical connections", 
      "corresponding activation energies", 
      "spectroscopy", 
      "microscopy", 
      "ambient conditions", 
      "basal plane", 
      "GO", 
      "films", 
      "electrical resistivity", 
      "electrical conductance", 
      "second process", 
      "resistivity decrease", 
      "temperature reduction", 
      "FTIR spectroscopy", 
      "different layers", 
      "energy", 
      "high temperature", 
      "temperature range", 
      "plane", 
      "effective value", 
      "eV", 
      "desorption", 
      "flakes", 
      "first process", 
      "surface", 
      "annealing", 
      "resistivity", 
      "magnitude", 
      "epoxy", 
      "oxide", 
      "process", 
      "layer", 
      "thickness", 
      "carbon", 
      "method", 
      "temperature", 
      "conductance", 
      "order", 
      "water", 
      "range", 
      "function", 
      "conditions", 
      "reduction", 
      "alkoxy groups", 
      "results", 
      "values", 
      "connection", 
      "increase", 
      "decrease", 
      "group", 
      "probe force (SKPFM) microscopy", 
      "OH groups desorption", 
      "groups desorption", 
      "oxygen epoxy", 
      "SKPFM methods", 
      "flat carbon plane"
    ], 
    "name": "Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy", 
    "pagination": "139", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1103880038"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1186/s11671-018-2536-z"
        ]
      }, 
      {
        "name": "pubmed_id", 
        "type": "PropertyValue", 
        "value": [
          "29740776"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1186/s11671-018-2536-z", 
      "https://app.dimensions.ai/details/publication/pub.1103880038"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:33", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_762.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1186/s11671-018-2536-z"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

225 TRIPLES      22 PREDICATES      111 URIs      96 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1186/s11671-018-2536-z schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N77b561b13ce64a4ba9a392471c522a59
4 schema:citation sg:pub.10.1007/bf03353652
5 sg:pub.10.1007/s40820-016-0117-1
6 sg:pub.10.1038/nchem.1010
7 sg:pub.10.1038/nchem.1820
8 sg:pub.10.1038/nchem.907
9 sg:pub.10.1038/ncomms5376
10 sg:pub.10.1038/nnano.2008.199
11 schema:datePublished 2018-05-08
12 schema:datePublishedReg 2018-05-08
13 schema:description Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.
14 schema:genre article
15 schema:inLanguage en
16 schema:isAccessibleForFree true
17 schema:isPartOf N04f274f1d43b4e68a035c54bb053f0bb
18 N491f269295294e2e876de502c364f375
19 sg:journal.1037280
20 schema:keywords FTIR spectroscopy
21 GO
22 GO films
23 GO flakes
24 GO planes
25 Kelvin probe force microscopy
26 OH groups desorption
27 Raman spectroscopy
28 SKPFM methods
29 Scanning Kelvin Probe Force Microscopy
30 activation energy
31 alkoxy groups
32 ambient conditions
33 annealing
34 atomic force microscopy
35 basal plane
36 carbon
37 carbon planes
38 conditions
39 conductance
40 connection
41 corresponding activation energies
42 decrease
43 desorption
44 different layers
45 drop-casting method
46 eV
47 effective value
48 electrical conductance
49 electrical connections
50 electrical resistivity
51 energy
52 epoxy
53 films
54 first process
55 flakes
56 flat carbon plane
57 force microscopy
58 four-point probe method
59 function
60 graphene oxide
61 graphene oxide films
62 group
63 groups desorption
64 high temperature
65 increase
66 layer
67 low work function
68 low-temperature annealing
69 magnitude
70 method
71 microscopy
72 order
73 orders of magnitude
74 oxide
75 oxide films
76 oxygen epoxy
77 photoelectron spectroscopy
78 plane
79 probe force (SKPFM) microscopy
80 probe method
81 process
82 range
83 ray photoelectron spectroscopy
84 reduction
85 resistivity
86 resistivity decrease
87 results
88 second process
89 spectroscopy
90 surface
91 temperature
92 temperature range
93 temperature reduction
94 thickness
95 values
96 water
97 work function
98 schema:name Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy
99 schema:pagination 139
100 schema:productId N742f06224cc143439f53702671da1a02
101 Nca27648d07364155a30d448874ddc898
102 Ne535d96fc68847669b1d6a36ab4ccd98
103 schema:sameAs https://app.dimensions.ai/details/publication/pub.1103880038
104 https://doi.org/10.1186/s11671-018-2536-z
105 schema:sdDatePublished 2021-11-01T18:33
106 schema:sdLicense https://scigraph.springernature.com/explorer/license/
107 schema:sdPublisher Nd63cc2538fd0446ab96ed562aeec331b
108 schema:url https://doi.org/10.1186/s11671-018-2536-z
109 sgo:license sg:explorer/license/
110 sgo:sdDataset articles
111 rdf:type schema:ScholarlyArticle
112 N04f274f1d43b4e68a035c54bb053f0bb schema:issueNumber 1
113 rdf:type schema:PublicationIssue
114 N1e00613bea0641fca076808d0cf939c0 schema:affiliation grid-institutes:grid.466789.2
115 schema:familyName Vasin
116 schema:givenName Andrey V.
117 rdf:type schema:Person
118 N34fa89f3493e4c0a82e1c7b3b6bc9855 rdf:first sg:person.01262231522.35
119 rdf:rest N682af3b2a3894f18b7931601f1935227
120 N491f269295294e2e876de502c364f375 schema:volumeNumber 13
121 rdf:type schema:PublicationVolume
122 N682af3b2a3894f18b7931601f1935227 rdf:first N9e8e0a674aa34794ba7e50b09ec7da86
123 rdf:rest Nf5d5650fe831480fbe5200f3070f0793
124 N6c0c145aa7d44d92a09238c975af3c56 rdf:first sg:person.014725015445.98
125 rdf:rest rdf:nil
126 N742f06224cc143439f53702671da1a02 schema:name dimensions_id
127 schema:value pub.1103880038
128 rdf:type schema:PropertyValue
129 N77b561b13ce64a4ba9a392471c522a59 rdf:first sg:person.015301333141.20
130 rdf:rest Nbdd7ccce53aa4a3bbdec13dc636cad97
131 N9e8e0a674aa34794ba7e50b09ec7da86 schema:affiliation grid-institutes:grid.466789.2
132 schema:familyName Naseka
133 schema:givenName Victor M.
134 rdf:type schema:Person
135 Nbdd7ccce53aa4a3bbdec13dc636cad97 rdf:first sg:person.010311546360.11
136 rdf:rest N34fa89f3493e4c0a82e1c7b3b6bc9855
137 Nca27648d07364155a30d448874ddc898 schema:name doi
138 schema:value 10.1186/s11671-018-2536-z
139 rdf:type schema:PropertyValue
140 Nd63cc2538fd0446ab96ed562aeec331b schema:name Springer Nature - SN SciGraph project
141 rdf:type schema:Organization
142 Ne535d96fc68847669b1d6a36ab4ccd98 schema:name pubmed_id
143 schema:value 29740776
144 rdf:type schema:PropertyValue
145 Ned4e52adeb3943fba048b7c9804fd3fd rdf:first sg:person.013245164063.53
146 rdf:rest N6c0c145aa7d44d92a09238c975af3c56
147 Nef1a263b22484554b71ed26bbb37e791 rdf:first N1e00613bea0641fca076808d0cf939c0
148 rdf:rest Ned4e52adeb3943fba048b7c9804fd3fd
149 Nf5d5650fe831480fbe5200f3070f0793 rdf:first sg:person.015724432431.62
150 rdf:rest Nef1a263b22484554b71ed26bbb37e791
151 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
152 schema:name Physical Sciences
153 rdf:type schema:DefinedTerm
154 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
155 schema:name Other Physical Sciences
156 rdf:type schema:DefinedTerm
157 sg:journal.1037280 schema:issn 1556-276X
158 1931-7573
159 schema:name Nanoscale Research Letters
160 schema:publisher Springer Nature
161 rdf:type schema:Periodical
162 sg:person.010311546360.11 schema:affiliation grid-institutes:grid.466789.2
163 schema:familyName Lytvyn
164 schema:givenName Peter M.
165 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010311546360.11
166 rdf:type schema:Person
167 sg:person.01262231522.35 schema:affiliation grid-institutes:grid.466789.2
168 schema:familyName Nikolenko
169 schema:givenName Andrii S.
170 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01262231522.35
171 rdf:type schema:Person
172 sg:person.013245164063.53 schema:affiliation grid-institutes:grid.464622.0
173 schema:familyName Sevostianov
174 schema:givenName Stanislav V.
175 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245164063.53
176 rdf:type schema:Person
177 sg:person.014725015445.98 schema:affiliation grid-institutes:grid.466789.2
178 schema:familyName Nazarov
179 schema:givenName Alexei N.
180 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014725015445.98
181 rdf:type schema:Person
182 sg:person.015301333141.20 schema:affiliation grid-institutes:grid.440544.5
183 schema:familyName Slobodian
184 schema:givenName Oleksandr M.
185 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015301333141.20
186 rdf:type schema:Person
187 sg:person.015724432431.62 schema:affiliation grid-institutes:grid.425103.1
188 schema:familyName Khyzhun
189 schema:givenName Oleg Yu.
190 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015724432431.62
191 rdf:type schema:Person
192 sg:pub.10.1007/bf03353652 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029436366
193 https://doi.org/10.1007/bf03353652
194 rdf:type schema:CreativeWork
195 sg:pub.10.1007/s40820-016-0117-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044787155
196 https://doi.org/10.1007/s40820-016-0117-1
197 rdf:type schema:CreativeWork
198 sg:pub.10.1038/nchem.1010 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038598812
199 https://doi.org/10.1038/nchem.1010
200 rdf:type schema:CreativeWork
201 sg:pub.10.1038/nchem.1820 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039552170
202 https://doi.org/10.1038/nchem.1820
203 rdf:type schema:CreativeWork
204 sg:pub.10.1038/nchem.907 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017237473
205 https://doi.org/10.1038/nchem.907
206 rdf:type schema:CreativeWork
207 sg:pub.10.1038/ncomms5376 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041489318
208 https://doi.org/10.1038/ncomms5376
209 rdf:type schema:CreativeWork
210 sg:pub.10.1038/nnano.2008.199 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040606030
211 https://doi.org/10.1038/nnano.2008.199
212 rdf:type schema:CreativeWork
213 grid-institutes:grid.425103.1 schema:alternateName Frantsevych Institute for Problems of Materials Science NAS of Ukraine, 3 Krzhizhanovsky St., Kyiv, 03680 Ukraine
214 schema:name Frantsevych Institute for Problems of Materials Science NAS of Ukraine, 3 Krzhizhanovsky St., Kyiv, 03680 Ukraine
215 rdf:type schema:Organization
216 grid-institutes:grid.440544.5 schema:alternateName National Technical University of Ukraine “Igor Sikorsky KPI”, 37, Prosp.Peremohy, Kyiv, 03056 Ukraine
217 schema:name National Technical University of Ukraine “Igor Sikorsky KPI”, 37, Prosp.Peremohy, Kyiv, 03056 Ukraine
218 rdf:type schema:Organization
219 grid-institutes:grid.464622.0 schema:alternateName Chuiko Institute of Surface Chemistry NAS of Ukraine, 17 Generala Naumova St, Kyiv, 03164 Ukraine
220 schema:name Chuiko Institute of Surface Chemistry NAS of Ukraine, 17 Generala Naumova St, Kyiv, 03164 Ukraine
221 rdf:type schema:Organization
222 grid-institutes:grid.466789.2 schema:alternateName V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine
223 schema:name National Technical University of Ukraine “Igor Sikorsky KPI”, 37, Prosp.Peremohy, Kyiv, 03056 Ukraine
224 V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028 Ukraine
225 rdf:type schema:Organization
 




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