Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2017-03-16

AUTHORS

L. Khomenkova, D. Lehninger, O. Kondratenko, S. Ponomaryov, O. Gudymenko, Z. Tsybrii, V. Yukhymchuk, V. Kladko, J. von Borany, J. Heitmann

ABSTRACT

Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The “start point” of this process is in the range of 640–700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO2 matrix. The mechanism of phase separation is discussed in detail. More... »

PAGES

196

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/s11671-017-1960-9

DOI

http://dx.doi.org/10.1186/s11671-017-1960-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1084249780

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/28314364


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Khomenkova", 
        "givenName": "L.", 
        "id": "sg:person.0777143227.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0777143227.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Applied Physics, TU Bergakademie Freiberg, D-09596, Freiberg, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6862.a", 
          "name": [
            "Institute of Applied Physics, TU Bergakademie Freiberg, D-09596, Freiberg, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lehninger", 
        "givenName": "D.", 
        "id": "sg:person.013651227027.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013651227027.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kondratenko", 
        "givenName": "O.", 
        "id": "sg:person.07513434255.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07513434255.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ponomaryov", 
        "givenName": "S.", 
        "id": "sg:person.01063370657.79", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01063370657.79"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gudymenko", 
        "givenName": "O.", 
        "id": "sg:person.01063607353.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01063607353.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsybrii", 
        "givenName": "Z.", 
        "id": "sg:person.01053137377.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01053137377.96"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yukhymchuk", 
        "givenName": "V.", 
        "id": "sg:person.010646406447.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010646406447.72"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.466789.2", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kladko", 
        "givenName": "V.", 
        "id": "sg:person.01325326676.48", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01325326676.48"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314, Dresden, Germany", 
          "id": "http://www.grid.ac/institutes/grid.40602.30", 
          "name": [
            "Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314, Dresden, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "von Borany", 
        "givenName": "J.", 
        "id": "sg:person.01301500651.22", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01301500651.22"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Applied Physics, TU Bergakademie Freiberg, D-09596, Freiberg, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6862.a", 
          "name": [
            "Institute of Applied Physics, TU Bergakademie Freiberg, D-09596, Freiberg, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Heitmann", 
        "givenName": "J.", 
        "id": "sg:person.010603433231.89", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010603433231.89"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s0020168512060209", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043913852", 
          "https://doi.org/10.1134/s0020168512060209"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11664-004-0144-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1049726138", 
          "https://doi.org/10.1007/s11664-004-0144-4"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf01026311", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001978658", 
          "https://doi.org/10.1007/bf01026311"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s00339-016-0326-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009919469", 
          "https://doi.org/10.1007/s00339-016-0326-y"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1186/s11671-016-1308-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000536993", 
          "https://doi.org/10.1186/s11671-016-1308-x"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2017-03-16", 
    "datePublishedReg": "2017-03-16", 
    "description": "Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The \u201cstart point\u201d of this process is in the range of 640\u2013700\u00a0\u00b0C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO2 matrix. The mechanism of phase separation is discussed in detail.", 
    "genre": "article", 
    "id": "sg:pub.10.1186/s11671-017-1960-9", 
    "isAccessibleForFree": true, 
    "isPartOf": [
      {
        "id": "sg:journal.1037280", 
        "issn": [
          "1931-7573", 
          "1556-276X"
        ], 
        "name": "Nanoscale Research Letters", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "12"
      }
    ], 
    "keywords": [
      "Ge content", 
      "Ge nanoclusters", 
      "Auger electron spectroscopy", 
      "formation of Ge", 
      "RF magnetron sputtering", 
      "laser ellipsometry", 
      "Ar plasma", 
      "varied deposition conditions", 
      "electron spectroscopy", 
      "ZrO2 target", 
      "pure Ge", 
      "Ge phase", 
      "magnetron sputtering", 
      "crystalline Ge", 
      "X-ray diffraction", 
      "Raman scattering", 
      "deposition conditions", 
      "ZrO2 films", 
      "Ge", 
      "phase separation", 
      "annealing treatment", 
      "spectroscopy", 
      "films", 
      "nanoclusters", 
      "ellipsometry", 
      "sputtering", 
      "scattering", 
      "magnetron", 
      "ZrO2 matrix", 
      "Fourier transform", 
      "plasma", 
      "diffraction", 
      "thermal treatment", 
      "temperature", 
      "tetragonal ZrO2", 
      "crystallization temperature", 
      "ZrO2", 
      "formation", 
      "separation", 
      "nucleation", 
      "structure", 
      "phase", 
      "range", 
      "detail", 
      "crystallization", 
      "transform", 
      "target", 
      "content", 
      "effect", 
      "matrix", 
      "process", 
      "mechanism", 
      "conditions", 
      "point", 
      "start point", 
      "treatment"
    ], 
    "name": "Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures", 
    "pagination": "196", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1084249780"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1186/s11671-017-1960-9"
        ]
      }, 
      {
        "name": "pubmed_id", 
        "type": "PropertyValue", 
        "value": [
          "28314364"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1186/s11671-017-1960-9", 
      "https://app.dimensions.ai/details/publication/pub.1084249780"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-10-01T06:43", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221001/entities/gbq_results/article/article_749.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1186/s11671-017-1960-9"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1186/s11671-017-1960-9'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1186/s11671-017-1960-9'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1186/s11671-017-1960-9'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1186/s11671-017-1960-9'


 

This table displays all metadata directly associated to this object as RDF triples.

206 TRIPLES      21 PREDICATES      86 URIs      73 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1186/s11671-017-1960-9 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Ne792204ace16424ba12fbf1939823a80
4 schema:citation sg:pub.10.1007/bf01026311
5 sg:pub.10.1007/s00339-016-0326-y
6 sg:pub.10.1007/s11664-004-0144-4
7 sg:pub.10.1134/s0020168512060209
8 sg:pub.10.1186/s11671-016-1308-x
9 schema:datePublished 2017-03-16
10 schema:datePublishedReg 2017-03-16
11 schema:description Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The “start point” of this process is in the range of 640–700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO2 matrix. The mechanism of phase separation is discussed in detail.
12 schema:genre article
13 schema:isAccessibleForFree true
14 schema:isPartOf Ndd8fd84af2cc42c6ab6377162a402ee2
15 Nee64d39370f84808a553139d7bfae649
16 sg:journal.1037280
17 schema:keywords Ar plasma
18 Auger electron spectroscopy
19 Fourier transform
20 Ge
21 Ge content
22 Ge nanoclusters
23 Ge phase
24 RF magnetron sputtering
25 Raman scattering
26 X-ray diffraction
27 ZrO2
28 ZrO2 films
29 ZrO2 matrix
30 ZrO2 target
31 annealing treatment
32 conditions
33 content
34 crystalline Ge
35 crystallization
36 crystallization temperature
37 deposition conditions
38 detail
39 diffraction
40 effect
41 electron spectroscopy
42 ellipsometry
43 films
44 formation
45 formation of Ge
46 laser ellipsometry
47 magnetron
48 magnetron sputtering
49 matrix
50 mechanism
51 nanoclusters
52 nucleation
53 phase
54 phase separation
55 plasma
56 point
57 process
58 pure Ge
59 range
60 scattering
61 separation
62 spectroscopy
63 sputtering
64 start point
65 structure
66 target
67 temperature
68 tetragonal ZrO2
69 thermal treatment
70 transform
71 treatment
72 varied deposition conditions
73 schema:name Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures
74 schema:pagination 196
75 schema:productId N4d1616e3fab74b088bb76bd1898c8032
76 N52af0ccdb077466e880f23b1d2cb0322
77 N889a2c3764014a10bfe705bf32d5389b
78 schema:sameAs https://app.dimensions.ai/details/publication/pub.1084249780
79 https://doi.org/10.1186/s11671-017-1960-9
80 schema:sdDatePublished 2022-10-01T06:43
81 schema:sdLicense https://scigraph.springernature.com/explorer/license/
82 schema:sdPublisher N841df58359ce4f91a0264437ad4174df
83 schema:url https://doi.org/10.1186/s11671-017-1960-9
84 sgo:license sg:explorer/license/
85 sgo:sdDataset articles
86 rdf:type schema:ScholarlyArticle
87 N289f21c7a6f5458fbe2ee0074d38b840 rdf:first sg:person.01063607353.09
88 rdf:rest Nf8f797f8b2524879a5b2fc3ae13998d5
89 N39d3db46197c4ab8a9257d26ea895278 rdf:first sg:person.010646406447.72
90 rdf:rest Nbd472459db3f49f89ccbfdcb8ce3f2de
91 N49395c99098445b0b859c82832f3f4b4 rdf:first sg:person.013651227027.10
92 rdf:rest N62a592f4b331420f81eef12663f8761a
93 N4d1616e3fab74b088bb76bd1898c8032 schema:name doi
94 schema:value 10.1186/s11671-017-1960-9
95 rdf:type schema:PropertyValue
96 N52af0ccdb077466e880f23b1d2cb0322 schema:name pubmed_id
97 schema:value 28314364
98 rdf:type schema:PropertyValue
99 N59172ab68f8449388e5d195c6edd2bb2 rdf:first sg:person.01063370657.79
100 rdf:rest N289f21c7a6f5458fbe2ee0074d38b840
101 N62a592f4b331420f81eef12663f8761a rdf:first sg:person.07513434255.24
102 rdf:rest N59172ab68f8449388e5d195c6edd2bb2
103 N6a8599979b1c4a9f9c210b6d5a1c539e rdf:first sg:person.01301500651.22
104 rdf:rest Nbbfbb07256574eb7978d9bcdcdf8ddc5
105 N841df58359ce4f91a0264437ad4174df schema:name Springer Nature - SN SciGraph project
106 rdf:type schema:Organization
107 N889a2c3764014a10bfe705bf32d5389b schema:name dimensions_id
108 schema:value pub.1084249780
109 rdf:type schema:PropertyValue
110 Nbbfbb07256574eb7978d9bcdcdf8ddc5 rdf:first sg:person.010603433231.89
111 rdf:rest rdf:nil
112 Nbd472459db3f49f89ccbfdcb8ce3f2de rdf:first sg:person.01325326676.48
113 rdf:rest N6a8599979b1c4a9f9c210b6d5a1c539e
114 Ndd8fd84af2cc42c6ab6377162a402ee2 schema:volumeNumber 12
115 rdf:type schema:PublicationVolume
116 Ne792204ace16424ba12fbf1939823a80 rdf:first sg:person.0777143227.34
117 rdf:rest N49395c99098445b0b859c82832f3f4b4
118 Nee64d39370f84808a553139d7bfae649 schema:issueNumber 1
119 rdf:type schema:PublicationIssue
120 Nf8f797f8b2524879a5b2fc3ae13998d5 rdf:first sg:person.01053137377.96
121 rdf:rest N39d3db46197c4ab8a9257d26ea895278
122 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
123 schema:name Engineering
124 rdf:type schema:DefinedTerm
125 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
126 schema:name Materials Engineering
127 rdf:type schema:DefinedTerm
128 sg:journal.1037280 schema:issn 1556-276X
129 1931-7573
130 schema:name Nanoscale Research Letters
131 schema:publisher Springer Nature
132 rdf:type schema:Periodical
133 sg:person.01053137377.96 schema:affiliation grid-institutes:grid.466789.2
134 schema:familyName Tsybrii
135 schema:givenName Z.
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01053137377.96
137 rdf:type schema:Person
138 sg:person.010603433231.89 schema:affiliation grid-institutes:grid.6862.a
139 schema:familyName Heitmann
140 schema:givenName J.
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010603433231.89
142 rdf:type schema:Person
143 sg:person.01063370657.79 schema:affiliation grid-institutes:grid.466789.2
144 schema:familyName Ponomaryov
145 schema:givenName S.
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01063370657.79
147 rdf:type schema:Person
148 sg:person.01063607353.09 schema:affiliation grid-institutes:grid.466789.2
149 schema:familyName Gudymenko
150 schema:givenName O.
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01063607353.09
152 rdf:type schema:Person
153 sg:person.010646406447.72 schema:affiliation grid-institutes:grid.466789.2
154 schema:familyName Yukhymchuk
155 schema:givenName V.
156 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010646406447.72
157 rdf:type schema:Person
158 sg:person.01301500651.22 schema:affiliation grid-institutes:grid.40602.30
159 schema:familyName von Borany
160 schema:givenName J.
161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01301500651.22
162 rdf:type schema:Person
163 sg:person.01325326676.48 schema:affiliation grid-institutes:grid.466789.2
164 schema:familyName Kladko
165 schema:givenName V.
166 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01325326676.48
167 rdf:type schema:Person
168 sg:person.013651227027.10 schema:affiliation grid-institutes:grid.6862.a
169 schema:familyName Lehninger
170 schema:givenName D.
171 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013651227027.10
172 rdf:type schema:Person
173 sg:person.07513434255.24 schema:affiliation grid-institutes:grid.466789.2
174 schema:familyName Kondratenko
175 schema:givenName O.
176 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07513434255.24
177 rdf:type schema:Person
178 sg:person.0777143227.34 schema:affiliation grid-institutes:grid.466789.2
179 schema:familyName Khomenkova
180 schema:givenName L.
181 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0777143227.34
182 rdf:type schema:Person
183 sg:pub.10.1007/bf01026311 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001978658
184 https://doi.org/10.1007/bf01026311
185 rdf:type schema:CreativeWork
186 sg:pub.10.1007/s00339-016-0326-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1009919469
187 https://doi.org/10.1007/s00339-016-0326-y
188 rdf:type schema:CreativeWork
189 sg:pub.10.1007/s11664-004-0144-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049726138
190 https://doi.org/10.1007/s11664-004-0144-4
191 rdf:type schema:CreativeWork
192 sg:pub.10.1134/s0020168512060209 schema:sameAs https://app.dimensions.ai/details/publication/pub.1043913852
193 https://doi.org/10.1134/s0020168512060209
194 rdf:type schema:CreativeWork
195 sg:pub.10.1186/s11671-016-1308-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1000536993
196 https://doi.org/10.1186/s11671-016-1308-x
197 rdf:type schema:CreativeWork
198 grid-institutes:grid.40602.30 schema:alternateName Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314, Dresden, Germany
199 schema:name Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314, Dresden, Germany
200 rdf:type schema:Organization
201 grid-institutes:grid.466789.2 schema:alternateName V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine
202 schema:name V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr.Nauky, 03028, Kyiv, Ukraine
203 rdf:type schema:Organization
204 grid-institutes:grid.6862.a schema:alternateName Institute of Applied Physics, TU Bergakademie Freiberg, D-09596, Freiberg, Germany
205 schema:name Institute of Applied Physics, TU Bergakademie Freiberg, D-09596, Freiberg, Germany
206 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...