Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2013-02-07

AUTHORS

Damien Salomon, Amelie Dussaigne, Matthieu Lafossas, Christophe Durand, Catherine Bougerol, Pierre Ferret, Joel Eymery

ABSTRACT

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. More... »

PAGES

61-61

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-8-61

DOI

http://dx.doi.org/10.1186/1556-276x-8-61

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053030914

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/23391377


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